DX Centers in AlGaAs and Pressurised GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Anand ◽  
S. Subramanian ◽  
B. M. Arora ◽  
Y. C. Lu ◽  
E. Bauser
Keyword(s):  
Low Temperature ◽  
Effective Mass ◽  
Charge State ◽  
Hall Mobility ◽  
Thermal Emission ◽  
Dx Centers ◽  
Emission Properties ◽  
Dx Center ◽  
Neutron Transmutation

ABSTRACTIn this paper, we present results of our investigations on some aspects of the DX centers. It is shown from the low temperature Hall mobility measurements that the charge state of the DX center is neutral supporting the positive U model for the DX center. Hall and DLTS measurements on Al-rich Al0.8Ga0.2As:Te sample show a reversal in the ordering of the energies of the hydrogenic and deep states of the Te donor, with the DX state lying higher than the X valley related effective mass state. Thermal emission properties of the pressure induced DX states of Ge and Se donors in neutron transmutation doped (NTD) GaAs are discussed.

Study of DX Centers in GaAs1−xPx :Te

1987 ◽  
Vol 104 ◽  
Author(s):  
J. Kaniewski ◽  
M. Kaniewska
Keyword(s):  
Transition Region ◽  
Vapor Phase ◽  
Thermal Activation ◽  
Phosphorus Content ◽  
Alloy Composition ◽  
Thermal Emission ◽  
Exponential Behavior ◽  
Dx Centers ◽  
Dx Center ◽  
Parameter Values

ABSTRACTA capacitance study of GaAs1−xPx : Te. x > 0.2, obtained by vapor phase epitaxy, has revealed two DX centers, characterized by thermal activation energies ΔEA = 0.18 eV and ΔEB = 0.39 eV. and photoionization energies 0.6 eV and 1.1 eV, respectively. Both traps show strong non-exponential behavior in thermal emission and capture processes. It is shown that correct parameter values for DX centers can be determined from measurements of the transition region width. This method, which allows us to circumvent alloy effects, has been used to study DX center parameters as a function of the phosphorus content. It is demonstrated that the level B is linked to the X minimum, and that the barrier height for electron capture at this trap, with respect to the indirect minimum, is independent of alloy composition.

Electric Field Enhancement of Electron Emission from DX Centers and Consequences

1989 ◽  
Vol 163 ◽  
Author(s):  
J.C. Bourgoin ◽  
M. Zazooi ◽  
S.L. Feng ◽  
H.J. von Bardeleben ◽  
S. Alaya ◽  
...  
Keyword(s):  
Electric Field ◽  
Effective Mass ◽  
Electron Emission ◽  
Field Enhancement ◽  
Lattice Relaxation ◽  
Donor Impurity ◽  
Electric Field Enhancement ◽  
Dx Centers ◽  
Small Lattice ◽  
Dx Center

AbstractWe present data which show that electron emission from the DX center is sensitive to the Poole-Frenkel effect. We demonstrate that this result implies that the DX center is an L effective-mass state of the donor impurity accompanied by a small lattice relaxation. We show that all the observations so far obtained on this center are in agreement with this model.

DX Centers in GaAs and AlxGal-x.As: Properties and Influence on Material and Device Characteristics

1987 ◽  
Vol 104 ◽  
Author(s):  
P. M. Mooney
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Conduction Band ◽  
Energy State ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Persistent Photoconductivity ◽  
Dx Centers ◽  
Compensation Mechanisms ◽  
Dx Center

ABSTRACTThe DX center, the lowest energy state of the donor in AlGaAs with x > 0.22, is responsible for the reduced conductivity as well as the persistent photoconductivity observed in this material at low temperature. Extensive studies of the properties of this level and of its effects on the characteristics of some heterojunction devices are reviewed here. Recent measurements are presented showing that the characteristics of the DX center remain essentially unchanged when it is resonant with the conduction band (x < 0.22) and that, independent of other compensation mechanisms, the DX center therefore limits the free carrier concentration in GaAs to a maximum of about 2×1019 cm− 3.

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

scholarly journals Inkjet-printed graphene Hall mobility measurements and low-frequency noise characterization

Nanoscale ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 6708-6716 ◽  
Author(s):  
Gabriele Calabrese ◽  
Lorenzo Pimpolari ◽  
Silvia Conti ◽  
Fabrice Mavier ◽  
Subimal Majee ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hall Mobility ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characterization

Inkjet printed graphene is in-depth investigated by means of Hall mobility measurements, low-temperature magnetoresistance analysis, and low frequency noise characterization.

Sign in / Sign up

Export Citation Format

Share Document