Observation of polarization independent electric field effect in InGaAs/InP tensile strained quantum well and its proposal for optical switch

1992 ◽  
Vol 61 (16) ◽  
pp. 1904-1906 ◽  
Author(s):  
K. G. Ravikumar ◽  
T. Aizawa ◽  
S. Suzaki ◽  
R. Yamauchi
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Field Effect ◽  
Optical Switch ◽  
Electric Field Effect ◽  
Strained Quantum Well ◽  
Polarization Independent

Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure

1985 ◽  
Vol 24 (Part 2, No. 8) ◽  
pp. L589-L592 ◽  
Author(s):  
Yasuo Kan ◽  
Masamichi Yamanishi ◽  
Ikuo Suemune ◽  
Hiroaki Yamamoto ◽  
Takafumi Yao
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Field Effect ◽  
State Transitions ◽  
Electric Field Effect ◽  
Quantum Well Structure

ELECTRO-OPTIC EFFECT IN A SEMI-PARABOLIC QUANTUM WELL WITH AN APPLIED ELECTRIC FIELD

2003 ◽  
Vol 17 (09) ◽  
pp. 347-354 ◽  
Author(s):  
LI ZHANG ◽  
HONG-JING XIE
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Applied Electric Field ◽  
Field Effect ◽  
Harmonic Oscillation ◽  
Electric Field Effect ◽  
Confining Potential ◽  
Compact Density ◽  
Electro Optic ◽  
Potential Frequency

By using the compact density matrix approach, the electro-optic effect (EOE) in a semi-parabolic quantum well (QW) with an applied electric field has been theoretically investigated. Via a variant of displacement harmonic oscillation, the exact electronic states in the semi-parabolic QW with an applied electric field are obtained. Numerical results on typical GaAs material reveal that the electro-optic effect nearly linearly increases with the increasing of magnitude of the electric field, but it monotonously decreases with the increasing of confining potential frequency of the semi-parabolic QW. The EOE in the model investigated is 102 times larger than that in the symmetric parabolic QW under the same electric field and the same frequency of parabolic confining potential, which is due to the self-asymmetry of the system and the electric field effect.

Electron states and electron Raman scattering in semiconductor step-quantum well: Electric field effect

2017 ◽  
Vol 104 ◽  
pp. 428-437 ◽  
Author(s):  
Ri. Betancourt-Riera ◽  
Re. Betancourt-Riera ◽  
L.A. Ferrer-Moreno ◽  
J.M. Nieto Jalil
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Raman Scattering ◽  
Field Effect ◽  
Electric Field Effect ◽  
Electron States

Analysis of electric field effect in quantum box structure and its application to low-loss intersectional type optical switch

1991 ◽  
Vol 9 (10) ◽  
pp. 1376-1385 ◽  
Author(s):  
K.G. Ravikumar ◽  
T. Aizawa ◽  
K. Matsubara ◽  
M. Asada ◽  
Y. Suematsu
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Optical Switch ◽  
Electric Field Effect ◽  
Low Loss ◽  
Box Structure
Sign in / Sign up

Export Citation Format

Share Document