Effect of electric and magnetic field on impurity binding energy in InGaAsP/InP quantum ring

The ground state binding energy of hydrogenic donor impurity is calculated using the plane wave basis method in InGaAsP/InP quantum ring under applied electric and magnetic fields. The results show that the binding energy is nonlinear function of ring height and outer radius. The binding energy has a maximum near the center of radial or axial direction. The external electric field changes the probability distribution of electron, and then the difference of binding energies for impurity located at symmetrical positions increases. The binding energy increases with the increase of magnetic field and the effect of magnetic field is more obvious along the direction of magnetic field.

External electric field effect on the binding energy of a hydrogenic donor impurity in InGaAsP/InP concentric double quantum rings

Within the framework of effective-mass envelope-function theory, the ground state binding energy of a hydrogenic donor impurity is calculated in the InGaAsP/InP concentric double quantum rings (CDQRs) using the plane wave method. The effects of geometry, impurity position, external electric field and alloy composition on binding energy are considered. It is shown that the peak value of the binding energy appears in two rings with large gap as the donor impurity moves along the radial direction. The binding energy reaches the peak value at the center of ring height when the donor impurity moves along the axial direction. The binding energy shows nonlinear variation with the increase of ring height. With the external electric field applied along the z-axis, the binding energy of the donor impurity located at z[Formula: see text] decreases while that located at z[Formula: see text] increases. In addition, the binding energy decreases with increasing Ga composition, but increases with the increasing As composition.