Sub‐50 nm high aspect‐ratio silicon pillars, ridges, and trenches fabricated using ultrahigh resolution electron beam lithography and reactive ion etching

1993 ◽  
Vol 62 (12) ◽  
pp. 1414-1416 ◽  
Author(s):  
P. B. Fischer ◽  
S. Y. Chou
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electron Beam Lithography ◽  
Reactive Ion Etching ◽  
Ultrahigh Resolution ◽  
Ion Etching ◽  
Resolution Electron ◽  
Silicon Pillars

Reactive Ion Etching and Lithographic Characterization of a New Organosilicon Resist

1986 ◽  
Vol 76 ◽  
Author(s):  
R. G. Tarascon ◽  
A. Shugard ◽  
E. Reichmanis
Keyword(s):  
Electron Beam ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Electron Beam Lithography ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Base Resin ◽  
New Material ◽  
Submicron Resolution

ABSTRACTWe describe the use of a novel organosilicon novolac as a base resin component of bi-level resist systems for both photo and electron-beam lithography. The lithographic evaluation of the new material demonstrates submicron resolution and high aspect ratio images with little linewidth loss after reactive ion etching (RIE). The optimization of the RIE conditions will be also discussed.

Deep reactive ion etching of sub-micrometer trenches with ultra high aspect ratio

2014 ◽  
Vol 113 ◽  
pp. 35-39 ◽  
Author(s):  
Jayalakshmi Parasuraman ◽  
Anand Summanwar ◽  
Frédéric Marty ◽  
Philippe Basset ◽  
Dan E. Angelescu ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Deep Reactive Ion Etching
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