Normal incidence intersubband transitions in Si‐doped InGaAs multiple quantum wells

1993 ◽  
Vol 62 (25) ◽  
pp. 3342-3344 ◽  
Author(s):  
Lung‐Han Peng ◽  
Clifton G. Fonstad
Keyword(s):  
Quantum Wells ◽  
Normal Incidence ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Si Doped

Intrasubband and intersubband transitions in GaAs∕AlxGa1−xAs multiple quantum wells

2007 ◽  
Vol 90 (16) ◽  
pp. 162111
Author(s):  
J. M. Li ◽  
K. Y. Qian ◽  
Q. S. Zhu ◽  
Z. G. Wang
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions

Optical properties and recombination dynamics of InGaN/GaN multiple quantum wells with Si-doped barriers

2001 ◽  
Vol 118 (11) ◽  
pp. 547-551 ◽  
Author(s):  
Mee-Yi Ryu ◽  
Phil Won Yu ◽  
Eunsoon Oh ◽  
Chulsoo Sone ◽  
Okhyun Nam ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Si Doped ◽  
Recombination Dynamics

Intersubband transitions in ZnO multiple quantum wells

2008 ◽  
Vol 92 (19) ◽  
pp. 191906 ◽  
Author(s):  
M. Belmoubarik ◽  
K. Ohtani ◽  
H. Ohno
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions
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