Strain effects on the intersubband transitions in GaN/AlN multiple quantum wells grown by low-temperature metal organic vapor phase epitaxy with AlGaN interlayer

2009 ◽  
Vol 95 (16) ◽  
pp. 161908 ◽  
Author(s):  
Hassanet Sodabanlu ◽  
Jung-Seung Yang ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transitions ◽  
Strain Effects ◽  
Organic Vapor ◽  
Metal Organic

P-Down InGaN/GaN Multiple Quantum Wells Light-Emitting Diode Structure Grown by Metal-Organic Vapor-Phase Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 4B) ◽  
pp. 2489-2492 ◽  
Author(s):  
Chih-Hsin Ko ◽  
Yan-Kuin Su ◽  
Shoou-Jinn Chang ◽  
Ta-Ming Kuan ◽  
Chung-I Chiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Light Emitting Diode ◽  
Vapor Phase Epitaxy ◽  
Diode Structure ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Organic Vapor ◽  
Metal Organic

Intersubband Transition at 1.52 µm in GaN/AlN Multiple Quantum Wells Grown by Metal Organic Vapor Phase Epitaxy

2009 ◽  
Vol 2 ◽  
pp. 061002 ◽  
Author(s):  
Hassanet Sodabanlu ◽  
Jung-Seung Yang ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Intersubband Transition ◽  
Organic Vapor ◽  
Metal Organic

Fabrication of Abrupt AlN/GaN Multi Quantum Wells by Low Temperature Metal Organic Vapor Phase Epitaxy

2009 ◽  
Vol 2 ◽  
pp. 051004 ◽  
Author(s):  
Jung-Seung Yang ◽  
Hassanet Sodabanlu ◽  
Masakazu Sugiyama ◽  
Yoshiaki Nakano ◽  
Yukihiro Shimogaki
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

scholarly journals Investigation of the Electro-Optical Characteristics of GaAs/AlGaAs Multiple Quantum Well Grown by Metal Organic Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Aslan Turkoglu ◽  
Yüksel Ergun
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Electric Fields ◽  
Vapor Phase ◽  
Theoretical Calculations ◽  
Energy Levels ◽  
Vapor Phase Epitaxy ◽  
Multiple Quantum ◽  
Organic Vapor ◽  
Metal Organic

Abstract In this study, the photoluminescence measurements of GaAs/AlGaAs multi-quantum-wells heterojunction structure grown on n+-GaAs substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) method are investigated. By dropping 5145 Å wavelength laser light on the sample at room temperature and low temperatures, the transitions between the bands in the structure and the changes in these transitions under the different electric fields and temperatures are observed. In addition, by making theoretically developed self-consistent potential calculations, the subband energy levels and their corresponding wave functions of the structure under the electric field and without the electric field are calculated. The obtained numerical results were found to be in full agreement with the experimental measurements and theoretical calculations.

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