Electrical and optical properties of selectively doped Al0.25Ga0.75As/InyGa1−yAs (0.25≤y≤0.45) pseudomorphic heterostructures grown by molecular‐beam epitaxy
2010 ◽
Vol 503
(1)
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pp. 155-158
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2001 ◽
Vol 81
(1-3)
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pp. 62-66
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2009 ◽
Vol 255
(9)
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pp. 4913-4915
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