Carrier escape time dependence on multiple quantum well structure in InGaAs/In(Ga)AlAs systems

1994 ◽  
Vol 64 (23) ◽  
pp. 3130-3132 ◽  
Author(s):  
H. Uenohara ◽  
R. Takahashi ◽  
Y. Kawamura ◽  
H. Iwamura
Keyword(s):  
Quantum Well ◽  
Time Dependence ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Carrier Escape

Carrier Escape Time and Temperature-Dependent Carrier Collection Efficiency of Tunneling-Enhanced Multiple Quantum Well Solar Cells

2014 ◽  
Vol 4 (2) ◽  
pp. 607-613 ◽  
Author(s):  
Kasidit Toprasertpong ◽  
Hiromasa Fujii ◽  
Yunpeng Wang ◽  
Kentaroh Watanabe ◽  
Masakazu Sugiyama ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Collection Efficiency ◽  
Multiple Quantum Well ◽  
Escape Time ◽  
Multiple Quantum ◽  
Temperature Dependent ◽  
Carrier Collection ◽  
Carrier Escape

Far infrared reflectivity of a GaAs/Al0.33Ga0.67As multiple quantum well structure

1996 ◽  
Vol 27 (1) ◽  
pp. 87-92
Author(s):  
P.M. Nikolić ◽  
Z. Ristovski ◽  
S. Đurić ◽  
V. Blagojević ◽  
M.D. Dramićanin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Far Infrared ◽  
Multiple Quantum ◽  
Infrared Reflectivity ◽  
Quantum Well Structure

Spin-Flip Raman Studies of a ZnSe / Zn1-xMnxSe Multiple Quantum Well Structure

1995 ◽  
Vol 182-184 ◽  
pp. 455-458 ◽  
Author(s):  
P.J. Boyce ◽  
D. Wolverson ◽  
J.J. Davies ◽  
W. Heimbrodt
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structure ◽  
Spin Flip

scholarly journals Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

2020 ◽  
Vol 28 (16) ◽  
pp. 23796
Author(s):  
Yi Chao Chow ◽  
Changmin Lee ◽  
Matthew S. Wong ◽  
Yuh-Renn Wu ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Barrier Thickness ◽  
Carrier Escape
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