Modification of the optical properties of liquid crystals using near‐field scanning optical microscopy

1995 ◽  
Vol 67 (15) ◽  
pp. 2129-2131 ◽  
Author(s):  
Patrick J. Moyer ◽  
Karsten Walzer ◽  
Michael Hietschold
Keyword(s):  
Optical Properties ◽  
Liquid Crystals ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Investigations of liquid crystals and liquid ambients using near-field scanning optical microscopy

1995 ◽  
Vol 61 (1-4) ◽  
pp. 291-294 ◽  
Author(s):  
Patrick J. Moyer ◽  
Stefan Kämmer ◽  
Karsten Walzer ◽  
Michael Hietschold
Keyword(s):  
Liquid Crystals ◽  
Optical Microscopy ◽  
Near Field ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

Near-field Scanning Optical Microscopy and Electron Microprobe Microscopy Investigations of Immiscibility Effects in Indium Gallium Phosphide Grown by Liquid Phase Epitaxy

2001 ◽  
Vol 667 ◽  
Author(s):  
C. A. Paulson ◽  
A. B. Ellis ◽  
T. F. Kuech
Keyword(s):  
Optical Properties ◽  
Liquid Phase ◽  
Optical Microscopy ◽  
Liquid Phase Epitaxy ◽  
Gallium Phosphide ◽  
Near Field ◽  
Indium Gallium Phosphide ◽  
Indium Gallium ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning

ABSTRACTWe have used Near-field Scanning Optical Microscopy (NSOM) and Electron Probe Microanalysis (EPMA) to study the topographic and microscopic optical properties of indium gallium phosphide (In1−xGaxP) samples grown by Liquid Phase Epitaxy (LPE) on gallium arsenide substrates. Photoluminescence (PL) intensity images gathered using NSOM exhibit strong, highly localized variations in the optical properties of these samples that are seen to occur roughly in registry with the surface topography. Shifts in the PL peak position (by 27 meV) occur across highly mismatched samples with high In content, whereas no shifts were seen for In1−xGaxP films with a nearly lattice matched composition. Compositional fluctuations lead to these PL peak energy shifts, measured by NSOM with a resolution of 250 nm. These composition fluctuations arise from the known solid-solid miscibility gap in the In1−xGaxP system at temperatures used for the growth of these samples.

Raman imaging with near‐field scanning optical microscopy

1995 ◽  
Vol 67 (17) ◽  
pp. 2483-2485 ◽  
Author(s):  
C. L. Jahncke ◽  
M. A. Paesler ◽  
H. D. Hallen
Keyword(s):  
Optical Microscopy ◽  
Near Field ◽  
Raman Imaging ◽  
Scanning Optical Microscopy ◽  
Near Field Scanning
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