Measurement of the mean electron‐hole pair creation energy in crystalline silicon for photons in the 50–1500 eV spectral range

1996 ◽  
Vol 69 (20) ◽  
pp. 2974-2976 ◽  
Author(s):  
F. Scholze ◽  
H. Rabus ◽  
G. Ulm
Keyword(s):  
Spectral Range ◽  
Crystalline Silicon ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair ◽  
The Mean

scholarly journals Characterization of a quadrant diamond transmission X-ray detector including a precise determination of the mean electron–hole pair creation energy

2018 ◽  
Vol 25 (2) ◽  
pp. 407-412
Author(s):  
Jeffrey W. Keister ◽  
Levent Cibik ◽  
Swenja Schreiber ◽  
Michael Krumrey
Keyword(s):  
Precise Determination ◽  
Pair Creation ◽  
Hole Pair ◽  
Photon Flux ◽  
Electron Hole ◽  
X Ray ◽  
Incoming Photon ◽  
Electron Hole Pair ◽  
Transmission Detector ◽  
The Mean

Precise monitoring of the incoming photon flux is crucial for many experiments using synchrotron radiation. For photon energies above a few keV, thin semiconductor photodiodes can be operated in transmission for this purpose. Diamond is a particularly attractive material as a result of its low absorption. The responsivity of a state-of-the art diamond quadrant transmission detector has been determined, with relative uncertainties below 1% by direct calibration against an electrical substitution radiometer. From these data and the measured transmittance, the thickness of the involved layers as well as the mean electron–hole pair creation energy were determined, the latter with an unprecedented relative uncertainty of 1%. The linearity and X-ray scattering properties of the device are also described.

scholarly journals Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations

2019 ◽  
Vol 66 (1) ◽  
pp. 444-451 ◽  
Author(s):  
Jingtian Fang ◽  
Mahmud Reaz ◽  
Stephanie L. Weeden-Wright ◽  
Ronald D. Schrimpf ◽  
Robert A. Reed ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Simulations ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Full Band ◽  
Electron Hole Pair ◽  
Average Electron ◽  
Silicon And Germanium

scholarly journals Electron–hole pair creation by atoms incident on a metal surface

2003 ◽  
Vol 119 (8) ◽  
pp. 4539-4549 ◽  
Author(s):  
J. R. Trail ◽  
D. M. Bird ◽  
M. Persson ◽  
S. Holloway
Keyword(s):  
Metal Surface ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair

Damping of Molecular Motion on a Solid Substrate: Evidence for Electron-Hole Pair Creation

1998 ◽  
Vol 80 (1) ◽  
pp. 121-124 ◽  
Author(s):  
G. Witte ◽  
K. Weiss ◽  
P. Jakob ◽  
J. Braun ◽  
K. L. Kostov ◽  
...  
Keyword(s):  
Molecular Motion ◽  
Solid Substrate ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair

scholarly journals Electron-Hole Pair Creation at Ag and Cu Surfaces by Adsorption of Atomic Hydrogen and Deuterium

1999 ◽  
Vol 82 (2) ◽  
pp. 446-449 ◽  
Author(s):  
H. Nienhaus ◽  
H. S. Bergh ◽  
B. Gergen ◽  
A. Majumdar ◽  
W. H. Weinberg ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair

Hydrogen Collision Model of The Staebler-Wronski Effect: Microscopics and Kinetics

1998 ◽  
Vol 507 ◽  
Author(s):  
Howard M. Branz
Keyword(s):  
Room Temperature ◽  
Pair Creation ◽  
Hole Pair ◽  
Dangling Bond ◽  
Electron Hole ◽  
Spin Resonance ◽  
Electron Hole Pair ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Creation Rate

ABSTRACTA new microscopic and kinetic model of light-induced metastability in hydrogenated amorphous silicon (a-Si:H) is described. Recombination and trapping of photoinduced carriers excite hydrogen from deep Si-H bonds into a mobile configuration, leaving a dangling bond (DB) defect at the site of excitation. Normally, mobile H are recaptured at DB defects and no metastability or net DB production results. However, when two mobile H collide, they form a metastable two-hydrogen complex and leave two spatially-uncorrelated Staebler-Wronski DBs. Thermal and light-induced annealing occur when mobile H are excited from the metastable two-H complex; they diffuse and are recaptured to DBs. The microscopic model is entirely compatible with electron-spin-resonance results showing neither DB-DB nor DB-H spatial correlation of the light-induced DBs. The model leads to new differential equations describing the evolution of the mobile H and DB densities. These equation equations explain the observed room-temperature Ndb∼G2/3t1/3 dependence of DB creation upon the electron-hole pair creation rate (G) and time. The model also accounts for both t1/3-kinetics at 4.2K and t1/2-kinetics under laser-pulse soaking. Neither of these results can be explained within the prevailing electron-hole pair recombination model.

Surface Plasmon Excitations in Cylindrical Nanorods by Electron–Hole Pair Creation

2012 ◽  
Vol 12 (12) ◽  
pp. 9271-9276 ◽  
Author(s):  
J. A. García Gallardo ◽  
J. L. Gervasoni ◽  
L. Kövér
Keyword(s):  
Surface Plasmon ◽  
Pair Creation ◽  
Hole Pair ◽  
Electron Hole ◽  
Electron Hole Pair
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