Site‐specific reaction kinetics for gallium arsenide metalorganic vapor‐phase epitaxy

1996 ◽  
Vol 69 (21) ◽  
pp. 3236-3238 ◽  
Author(s):  
S. D. Adamson ◽  
B. K. Han ◽  
R. F. Hicks
Keyword(s):  
Gallium Arsenide ◽  
Reaction Kinetics ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Site Specific ◽  
Specific Reaction

Initial stages of gallium arsenide metalorganic vapor phase epitaxy

2016 ◽  
Vol 52 (10) ◽  
pp. 985-989 ◽  
Author(s):  
P. B. Boldyrevskii ◽  
D. O. Filatov ◽  
I. A. Kazantseva ◽  
D. S. Smotrin ◽  
M. V. Revin
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Role of gas‐phase adducts in the growth of gallium arsenide by metalorganic vapor‐phase epitaxy

1993 ◽  
Vol 63 (2) ◽  
pp. 214-215 ◽  
Author(s):  
Douglas F. Foster ◽  
Christopher Glidewell ◽  
David J. Cole‐Hamilton
Keyword(s):  
Gallium Arsenide ◽  
Gas Phase ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Surface accumulation of tin in tin‐doped gallium arsenide grown by low pressure metalorganic vapor phase epitaxy

1984 ◽  
Vol 45 (11) ◽  
pp. 1196-1198 ◽  
Author(s):  
V. S. Sundaram ◽  
A. P. Roth ◽  
D. F. Williams ◽  
R. Yakimova
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Intentional Defect Incorporation in Metalorganic Vapor Phase Epitaxy Indium Gallium Arsenide by Oxygen Doping

1995 ◽  
Vol 378 ◽  
Author(s):  
J. W. Huang ◽  
T. F. Kuech
Keyword(s):  
Gallium Arsenide ◽  
Indium Gallium Arsenide ◽  
Valence Band ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Oxygen Doping ◽  
Constant Energy ◽  
Indium Gallium

AbstractIntentional defect incorporation in metalorganic vapor phase epitaxy (MOVPE) InxGai-xAs was achieved by controlled oxygen doping using diethylaluminum ethoxide (DEALO). DEALO doping has led to the incorporation of Al and O, and the compensation of shallow Si donors in InxGai-xAs:Si with 0≤x≤ 0.25. DLTS analysis on a series of InxGa1-xAs:Si:O samples with 0≤x≤ 0.18 showed that oxygen incorporation led to a set of deep levels, similar to those found in DEALO doped GaAs. The characteristic deep levels appear to remain at a relatively constant energy with respect to the valence band.

Analysis of the growth modes for gallium arsenide metalorganic vapor-phase epitaxy

2000 ◽  
Vol 88 (1) ◽  
pp. 508-512 ◽  
Author(s):  
D. C. Law ◽  
L. Li ◽  
M. J. Begarney ◽  
R. F. Hicks
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Growth Modes

Selective area metalorganic vapor-phase epitaxy of gallium arsenide on silicon

2008 ◽  
Vol 310 (3) ◽  
pp. 562-569 ◽  
Author(s):  
S.F. Cheng ◽  
L. Gao ◽  
R.L. Woo ◽  
A. Pangan ◽  
G. Malouf ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Selective Area
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