Formation and control of phosphorus buried layers in silicon using a pulsed XeCl excimer laser

1996 ◽  
Vol 69 (3) ◽  
pp. 319-321
Author(s):  
G. Verma ◽  
S. Talwar ◽  
T. W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control ◽  
Xecl Excimer Laser

Formation and control of boron buried layers in silicon using an excimer laser

1995 ◽  
Vol 16 (1) ◽  
pp. 14-16 ◽  
Author(s):  
G. Verma ◽  
A. Slaoui ◽  
S. Talwar ◽  
T.W. Sigmon
Keyword(s):  
Excimer Laser ◽  
Buried Layers ◽  
And Control

Excimer Laser Recrystallization of a-Si Employing Aluminum Masking Window

2000 ◽  
Vol 609 ◽  
Author(s):  
Jae-Hong Jeon ◽  
Min-Cheol Lee ◽  
Sang-Hoon Jung ◽  
Min-Koo Han
Keyword(s):  
Thermal Conductivity ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Recrystallization ◽  
Polycrystalline Silicon Films ◽  
And Control ◽  
Xecl Excimer Laser ◽  
High Reflectance ◽  
Lateral Heat

ABSTRACTA new excimer laser recrystallization method of amorphous silicon is proposed to increase the grain size and control the grain boundary locations in polycrystalline silicon films. The proposed method is based on the lateral grain growth which occurs at the interface between molten and unmolten regions. To obtain selectively molten regions, the proposed method employs aluminum patterns on amorphous silicon. The aluminum patterns act as the beam shield during the laser irradiation as well as the lateral heat sink during the solidification period. The high reflectance of aluminum at the wavelength of XeCl excimer laser offers stable beam shielding property, and the high thermal conductivity enhances the lateral heat flow by the quick draining of laterally propagated heat. TEM observation has revealed that the well arranged large grains were successfully obtained.

Poly-Silicon TFT Annealing with XeCl Excimer Laser.

2000 ◽  
Vol 28 (1) ◽  
pp. 24-28 ◽  
Author(s):  
Junichi SHIDA ◽  
Naoyuki KOBAYASHI ◽  
Hideaki KUSAMA
Keyword(s):  
Excimer Laser ◽  
Poly Silicon ◽  
Xecl Excimer Laser

Control of SF6 discharge gap switch by XeCl excimer laser

1991 ◽  
Vol 111 (4) ◽  
pp. 46-51 ◽  
Author(s):  
Hisato Okuda ◽  
Kazuhisa Katayama ◽  
Xiaojun Wang ◽  
Katsumi Masugata ◽  
Kiyoshi Yatsui
Keyword(s):  
Excimer Laser ◽  
Sf6 Discharge ◽  
Discharge Gap ◽  
Xecl Excimer Laser

5 kHz high repetition rate and high power XeCl excimer laser

1995 ◽  
Vol 66 (11) ◽  
pp. 5162-5164 ◽  
Author(s):  
Tatsumi Goto ◽  
Koji Kakizaki ◽  
Shigeyuki Takagi ◽  
Noboru Okamoto ◽  
Saburo Sato ◽  
...  
Keyword(s):  
Excimer Laser ◽  
High Power ◽  
Repetition Rate ◽  
High Repetition Rate ◽  
High Repetition ◽  
Xecl Excimer Laser

In-vitro ablation of fibrocartilage by XeCl excimer laser

1991 ◽  
Author(s):  
Martin Buchelt ◽  
Thanassis Papaioannou ◽  
Michael C. Fishbein ◽  
Werner Peters ◽  
Clain Beeder ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Xecl Excimer Laser
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