Time-resolved imaging of gas phase nanoparticle synthesis by laser ablation

1998 ◽  
Vol 72 (23) ◽  
pp. 2987-2989 ◽  
Author(s):  
David B. Geohegan ◽  
Alex A. Puretzky ◽  
Gerd Duscher ◽  
Stephen J. Pennycook
1998 ◽  
Vol 526 ◽  
Author(s):  
D. B. Geohegan ◽  
A. A. Puretzky ◽  
G. Duscher ◽  
S. J. Pennycook

AbstractThe dynamics of gas phase nanoparticle formation by pulsed laser ablation into background gases are revealed by imaging photoluminescence and Rayleigh-scattered light from gas-suspended SiOx nanoparticles following ablation of c-Si targets into 1-10 Torr He and Ar. Two sets of dynamic phenomena are presented for times up to 15 s after KrF-laser ablation. Ablation of Si into heavier Ar results in a uniform, stationary plume of nanoparticles while Si ablation into lighter He results in a turbulent ring of particles which propagates forward at 10 m/s. The effects of gas flow on nanoparticle formation, photoluminescence, and collection are described. The first in situ time-resolved photoluminescence spectra from 1-10 nm diameter silicon particles were measured as the nanoparticles were formed and transported. Three spectral bands (1.8, 2.5 and 3.2 eV) similar to photoluminescence from oxidized porous silicon were measured, but with a pronounced vibronic structure. The size and composition of individual gas-condensed nanoparticles were determined by scanning transmission electron microscopy and correlated with the gas-phase photoluminescence. Weblike-aggregate nanoparticle films were collected at room temperature and 77K on c-Si substrates. After standard passivation anneals, the films exhibited strong room temperature photo-luminescence consisting of 3 spectral bands in agreement with the gas-phase measurements, however lacking the vibronic structure. These techniques demonstrate new ways to study and optimize the luminescence of novel optoelectronic nanomaterials during synthesis in the gas phase, prior to deposition.


2005 ◽  
Vol 23 (2) ◽  
pp. 149-153 ◽  
Author(s):  
S. TRUSSO ◽  
E. BARLETTA ◽  
F. BARRECA ◽  
E. FAZIO ◽  
F. NERI

The dynamics of the expansion plasma produced by excimer laser ablation of a silicon target into oxygen and mixed O2/Ar atmosphere were studied by means of time-resolved imaging of the expanding plume. Experiments were performed in pure oxygen, ranging between 0.13 and 13.33 Pa, and at different O2/Ar ratios at a fixed total pressure of 13.33 Pa. The occurrence of a shock wave (SW) generated by the supersonic expansion of the plasma was observed at high pressure values. The presence of the SW had a strong influence on the structure of SiOx thin films. In fact, silicon dioxide thin films were always obtained in presence of the SW, irrespective of the oxygen content in the gaseous mixture. On the contrary, suboxide thin films were obtained when the expansion occurred at lower pressure values (no SW presence). The temperature rise following the developing of the SW, is supposed to enhance the oxygen molecules dissociation by increasing the efficiency of the silicon oxidation reaction.


1992 ◽  
Vol 13 (Supplement) ◽  
pp. 385-388
Author(s):  
Shinichi Fujisaka ◽  
Toshiaki Ito ◽  
Katsuhiko Sato

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