scholarly journals Direct correlation of transition metal impurities and minority carrier recombination in multicrystalline silicon

1998 ◽  
Vol 72 (26) ◽  
pp. 3482-3484 ◽  
Author(s):  
Scott A. McHugo ◽  
A. C. Thompson ◽  
I. Périchaud ◽  
S. Martinuzzi
2010 ◽  
Vol 49 (4) ◽  
pp. 04DP02 ◽  
Author(s):  
Ambigapathy Suvitha ◽  
Natarajan Sathiyamoorthy Venkataramanan ◽  
Ryoji Sahara ◽  
Hiroshi Mizuseki ◽  
Yoshiyuki Kawazoe

2005 ◽  
Vol 2 (7) ◽  
pp. 2520-2524 ◽  
Author(s):  
A.Y. Polyakov ◽  
N.B. Smirnov ◽  
A.V. Govorkov ◽  
Rohit Khanna ◽  
S.J. Pearton

2007 ◽  
Vol 401-402 ◽  
pp. 151-154 ◽  
Author(s):  
K. Matsukawa ◽  
K. Shirai ◽  
H. Yamaguchi ◽  
H. Katayama-Yoshida

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.


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