Low-threshold optically pumped lasing at 444 nm at room temperature with high characteristic temperature from Be-chalcogenide-based single-quantum-well laser structures

1999 ◽  
Vol 75 (7) ◽  
pp. 894-896 ◽  
Author(s):  
J. H. Chang ◽  
M. W. Cho ◽  
K. Godo ◽  
H. Makino ◽  
T. Yao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Quantum Well Laser ◽  
Low Threshold

Low‐threshold (≤ 92 A/cm2) 1.6 μm strained‐layer single quantum well laser diodes optically pumped by a 0.8 μm laser diode

1990 ◽  
Vol 57 (16) ◽  
pp. 1608-1609 ◽  
Author(s):  
C. E. Zah ◽  
R. Bhat ◽  
K. W. Cheung ◽  
N. C. Andreadakis ◽  
F. J. Favire ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Laser Diodes ◽  
Single Quantum ◽  
Optically Pumped ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Quantum Well Laser ◽  
Low Threshold

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

2017 ◽  
Vol 110 (6) ◽  
pp. 061104 ◽  
Author(s):  
Xin Yan ◽  
Wei Wei ◽  
Fengling Tang ◽  
Xi Wang ◽  
Luying Li ◽  
...  
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Heterostructure Laser ◽  
Gaas Nanowire ◽  
Low Threshold

A 1.3-µm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K

2000 ◽  
Vol 39 (Part 2, No. 2A) ◽  
pp. L86-L87 ◽  
Author(s):  
Takeshi Kitatani ◽  
Kouji Nakahara ◽  
Masahiko Kondow ◽  
Kazuhisa Uomi ◽  
Toshiaki Tanaka
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Sign in / Sign up

Export Citation Format

Share Document