GaAs-based room-temperature continuous-wave 1.59μm GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy

2005 ◽  
Vol 87 (23) ◽  
pp. 231121 ◽  
Author(s):  
Z. C. Niu ◽  
S. Y. Zhang ◽  
H. Q. Ni ◽  
D. H. Wu ◽  
H. Zhao ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Continuous Wave ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Long-wavelength strained-layer InAs/GaInAs single-quantum-well laser grown by molecular beam epitaxy on InP substrate

1993 ◽  
Vol 29 (14) ◽  
pp. 1255 ◽  
Author(s):  
E. Tournié ◽  
P. Grunberg ◽  
C. Fouillant ◽  
S. Kadret ◽  
B. Boissier ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Long Wavelength ◽  
Quantum Well Laser ◽  
Inp Substrate

Improved Characteristic Temperature (TO) of a 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode Through Thermal Annealing

1999 ◽  
Vol 597 ◽  
Author(s):  
T. Kitatani ◽  
M. Kondow ◽  
K. Nakahara ◽  
K. Uomi ◽  
T. Tanaka
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Laser Diode ◽  
Continuous Wave ◽  
Characteristic Temperature ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Lasing Wavelength ◽  
Quantum Well Laser ◽  
Continuous Wave Operation

AbstractThrough optimal thermal annealing of the active region of a 1.3 μm GaInNAs/GaAs single-quantum-well laser diode, we obtained a characteristic temperature (T0) of 215 K under pulsed operation from 20°C to 80°C. This is the highest yet reported value for a 1.3-μm semiconductor laser. Even under continuous-wave operation, the T0 was as high as 147 K. The lasing-wavelength change with temperature was as small as 0.39 nm/°C, indicating the excellent stability for a GalnNAs laser diode with T0 of over 200 K. These results demonstrate that GaInNAs is a promising material for fabricating long-wavelength laser diodes used for opticalfiber communications.

Room-temperature luminescence from single quantum well diodes grown by molecular beam epitaxy

1995 ◽  
Vol 157 (1-4) ◽  
pp. 15-20 ◽  
Author(s):  
H. Presting ◽  
T. Zinke ◽  
O. Brux ◽  
M. Gail ◽  
G. Abstreiter ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Room Temperature Luminescence

Room Temperature Operation of 650 nm AlGaAs Multi-Quantum-Well Laser Diode Grown by Molecular Beam Epitaxy

1985 ◽  
Vol 24 (Part 2, No. 2) ◽  
pp. L73-L75 ◽  
Author(s):  
Tadashi Saku ◽  
Hidetoshi Iwamura ◽  
Yoshiro Hirayama ◽  
Yoshifumi Suzuki ◽  
Hiroshi Okamoto
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Laser Diode ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Well Laser ◽  
Multi Quantum Well ◽  
Room Temperature Operation
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