Intra- versus intergranular low-field magnetoresistance of Sr2FeMoO6 thin films

1999 ◽  
Vol 75 (18) ◽  
pp. 2812-2814 ◽  
Author(s):  
H. Q. Yin ◽  
J.-S. Zhou ◽  
J.-P. Zhou ◽  
R. Dass ◽  
J. T. McDevitt ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Field

Low-field microwave magnetic permeability on FeSiBNbCu thin films

2006 ◽  
Vol 384 (1-2) ◽  
pp. 271-273 ◽  
Author(s):  
A.D.C. Viegas ◽  
L. Santi ◽  
M.A. Correa ◽  
R.B. da Silva ◽  
A.M.H. de Andrade ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Permeability ◽  
Low Field ◽  
Microwave Magnetic Permeability

Room-temperature and low-field magnetoresistance of La-Sr-Mn-O thin films

1999 ◽  
Vol 35 (5) ◽  
pp. 2844-2846 ◽  
Author(s):  
Kyung-Ku Choi ◽  
T. Taniyama ◽  
Y. Yamazaki
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Low Field

Magnetoresistance and Structure of Granular Co/Ag Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Mary Beth Stearns ◽  
Yuanda Cheng
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Room Temperature ◽  
Magnetization Measurements ◽  
X Ray ◽  
Conduction Electrons ◽  
Low Field ◽  
Co Concentration ◽  
Microscopy Techniques ◽  
Substrate Temperatures

ABSTRACTSeveral series of CoxAg1-x granular thin films (-3000Å) were fabricated by coevapora-tion of Co and Ag in a dual e-beam UHV deposition system at varying substrate temperatures. These films have low field magnetoresistance values as large as 31% at room temperature and 65% at liquid N2 temperature. The structure of the films was determined using magnetization measurements as well as x-ray and various electron microscopy techniques. The composition was determined using Rutherford backscattering spectroscopy. The Magnetoresistance was measured at both room and liquid N2 temperatures.We deduce from the magnetization and RBS Measurements that the films consist of Co globules embedded in a Ag Matrix and that there is no appreciable mixing of the Co and Ag atoms in the films deposited at substrate temperatures ≥ 400°K. The size of the Co globules is seen to increase with increasing Co concentration and the maximum magnetoresistance occurs in those films having the smallest Ag thickness which provides magnetic isolation of the Co globules.We suggest that the large magnetoresistance of these films arises from the same mechanism which causes the low field magnetoresistance in pure ferromagnets, namely, the scattering of the highly polarized d conduction electrons of the Co at magnetic boundaries. The large increase in the room temperature magnetoresistance of the CO/Ag films as compared to those of pure 3d ferromagnetic films is due to the distance between the magnetic boundaries being reduced to a few nanometers, because of the small size of the single domain Co globules, as compared to a few microns in 3d ferromagnets.

Low field magnetoresistance at the metal–insulator transition in epitaxial manganite thin films

2002 ◽  
Vol 81 (2) ◽  
pp. 319-321 ◽  
Author(s):  
A. de Andrés ◽  
S. Taboada ◽  
J. M. Colino ◽  
R. Ramı́rez ◽  
M. Garcı́a-Hernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Low Field

Enhanced low field magnetoresistance in nanostructured manganite thin films

2012 ◽  
Vol 01 (S1) ◽  
Author(s):  
A. Pomar
Keyword(s):  
Thin Films ◽  
Low Field

Partially crystallized La0.5Sr0.5MnO3 thin films by laser ablation and their enhanced low-field magnetoresistance

2000 ◽  
Vol 76 (16) ◽  
pp. 2286-2288 ◽  
Author(s):  
J.-M. Liu ◽  
J. Li ◽  
Q. Huang ◽  
L. P. You ◽  
S. J. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Low Field

Large low-field magnetoresistance observed in twinned La2∕3Ca1∕3MnO3 thin films epitaxially grown on yttria-stabilized zirconia-buffered silicon on insulator substrates

2005 ◽  
Vol 86 (11) ◽  
pp. 112514 ◽  
Author(s):  
J. Li ◽  
P. Wang ◽  
J. Y. Xiang ◽  
X. H. Zhu ◽  
W. Peng ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon On Insulator ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia ◽  
Low Field

Spin-polarized inter-grain tunneling as the probable mechanism for low-field magnetoresistance in partially crystallized La 0.5 Sr 0.5 MnO 3 thin films

2001 ◽  
Vol 73 (5) ◽  
pp. 625-630 ◽  
Author(s):  
J.-M. Liu ◽  
G.L. Yuan ◽  
X.Y. Chen ◽  
Z.G. Liu ◽  
Y.W. Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Probable Mechanism ◽  
Low Field ◽  
Spin Polarized

Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

2001 ◽  
Vol 89 (11) ◽  
pp. 6970-6972 ◽  
Author(s):  
N. K. Todd ◽  
N. D. Mathur ◽  
M. G. Blamire
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Film Thickness ◽  
Low Field

Enhancement of low-field-magnetoresistive response of tunnel-type magnetoresistance in metal–nonmetal granular thin films

1998 ◽  
Vol 188 (1-2) ◽  
pp. 30-34 ◽  
Author(s):  
N Kobayashi ◽  
S Ohnuma ◽  
S Murakami ◽  
T Masumoto ◽  
S Mitani ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Field
Sign in / Sign up

Export Citation Format

Share Document