Transient analysis in Al-doped barium strontium titanate thin films grown by pulsed laser deposition

2001 ◽  
Vol 90 (3) ◽  
pp. 1250-1254 ◽  
Author(s):  
S. Saha ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Transient Analysis ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Barium Strontium

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 656 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. Mcknight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in a continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Effect of Laser Energy and Laser Pulses on the Microstructure, Composition and Properties of Barium Strontium Titanate Thin Films Synthesized by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
J. D. Demaree ◽  
Steven H. McKnight
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zone Model ◽  
Barium Strontium

AbstractBarium strontium titanate (BSTO) films were synthesized by the pulsed laser deposition technique (PLD) on silicon substrates at room temperature. The thin films were synthesized at ambient temperature and 30 mT oxygen partial pressure, with 300, 400 and 500 mJ/cm2 laser fluence at 5, 10 and 20 pulses per second on silicon wafer substrates. All films were subsequently post-annealed at 750°C in an continuous oxygen stream. The microstructure, crystallinity and lattice constant of the BSTO films were studied with the aid of atomic force microscopy (FEM) and Glancing Angle X-ray Diffraction analysis (GAXRD). The hardness and modulus of elasticity of the films were studied with the aid of a nanohardness indenter. The film stoichiometry was determined with the aid of Rutherford Backscattering Spectrometry (RBS). The results of this research will be combined with the results of our previous work [1, 2] on the effect of substrate temperature and oxygen partial pressure on the microstructure and properties of the BSTO films in order to construct a structural zone model (SZM) of the BSTO films synthesized by PLD.

Compositionally graded epitaxial barium strontium titanate thin films derived from pulsed laser deposition

2003 ◽  
Vol 79 (2-3) ◽  
pp. 164-168 ◽  
Author(s):  
S.G Lu ◽  
X.H Zhu ◽  
C.L Mak ◽  
K.H Wong ◽  
H.L.W Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Barium Strontium

High tunability in compositionally graded epitaxial barium strontium titanate thin films by pulsed-laser deposition

2003 ◽  
Vol 82 (17) ◽  
pp. 2877-2879 ◽  
Author(s):  
S. G. Lu ◽  
X. H. Zhu ◽  
C. L. Mak ◽  
K. H. Wong ◽  
H. L. W. Chan ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
High Tunability ◽  
Barium Strontium

Effect of Deposition Parameters on the Microstructural Evolution and Electrical Properties of Charge-Balanced Barium Strontium Titanate Ferroelectric Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2003 ◽  
Vol 784 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Steven C. Tidrow ◽  
Michael Hatzistergos ◽  
Harry Efstathiadis
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Ion Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Microwave Antenna ◽  
Barium Strontium

ABSTRACTBarium strontium titanate (Ba0.60Sr0.40TiO3) thin films are the main materials of interest in tunable phase shifter for microwave antenna applications. Ba0.60Sr0.40Y0.05Ta0.05Ti0.90O3 thin films, of nominal thickness ranging from 1.7 μm to 2.3 μm, were synthesized on MgO (100) substrates, at substrate temperatures ranging from 500°C to 900°C, at oxygen partial pressures 20 and 50 mTorr, at 500 mJ energy fluence on 3 mm x 1 mm spot size and 10 pulses per second using the pulsed laser deposition technique. All film synthesized at temperatures greater than 500°C were crystalline. The effect of the ionic substitution and substrate temperature in conjunction with the effect of the oxygen partial pressure on the microstructure, and mechanical and electrical properties of the thin films have been studied using shallow angle x-ray diffraction, SEM, nanoindentation, atomic force microscopy (AFM), and focused ion beam analysis (FIB) and are reported in detail. We are currently in the process of measuring the capacitance of these films by various methods.

pH-sensitive properties of barium strontium titanate (BST) thin films prepared by pulsed laser deposition technique

2010 ◽  
Vol 207 (4) ◽  
pp. 824-830 ◽  
Author(s):  
Vahe V. Buniatyan ◽  
Maryam H. Abouzar ◽  
Norayr W. Martirosyan ◽  
Jürgen Schubert ◽  
Spartak Gevorgian ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Pulsed Laser ◽  
Ph Sensitive ◽  
Laser Deposition ◽  
Deposition Technique ◽  
Bst Thin Films ◽  
Barium Strontium

Low Temperature Growth Of Barium Strontium Titanate Films By Ultraviolet-Assisted Pulsed Laser Deposition

2000 ◽  
Vol 617 ◽  
Author(s):  
V. Craciun ◽  
J. M. Howard ◽  
E. S. Lambers ◽  
R. K. Singh
Keyword(s):  
Pulsed Laser Deposition ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Photoelectron Spectroscopy ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Flat Band ◽  
Si Substrates ◽  
Barium Strontium

AbstractBarium strontium titanate (BST) thin films were grown directly on Si substrates by an in situ ultraviolet (UV)-assisted pulsed laser deposition (UVPLD) technique. With respect to films grown by conventional (i.e. without UV illumination) pulsed laser deposition (PLD), the UVPLD grown films exhibited improved structural and electrical properties. The dielectric constant of a 40-nm thick film deposited at 650 °C was determined to be 281, the leakage current density was approximately 4×10−8 A/cm2at 100 kV/cm, and the density of interface states at the flat-band voltage was found to be approximately 5.6×1011 eV−1 cm−2 X-ray photoelectron spectroscopy investigations found that the surface of the grown films exhibited an additional Ba-containing phase, besides the usual BST perovskite phase, which was likely caused by stress and/or oxygen vacancies. The amount of this new phase was always smaller and very superficial for UVPLD grown films, which can explain their better overall properties.

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