Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors

2001 ◽  
Vol 79 (14) ◽  
pp. 2270-2272 ◽  
Author(s):  
R. M. Chu ◽  
Y. G. Zhou ◽  
Y. D. Zheng ◽  
P. Han ◽  
B. Shen ◽  
...  
2016 ◽  
Vol 858 ◽  
pp. 1182-1185
Author(s):  
Kotaro Hirose ◽  
Norimichi Chinone ◽  
Yasuo Cho

AlGaN/GaN heterostructure was observed using scanning nonlinear dielectric microscopy, which can measure both carrier and polarization profile in AlGaN/GaN heterostructure. As a result, GaN spontaneous polarization and AlGaN polarization which was sum of spontaneous polarization and piezoelectric polarization were clearly distinguished. Moreover, two dimensional electron gas was observed at the AlGaN/GaN interface. These results show that scanning nonlinear dielectric microscopy is useful method for evaluation of two dimensional electron gas profile and polarization profile in AlGaN/GaN heterostructure.


2002 ◽  
Vol 80 (24) ◽  
pp. 4549-4551 ◽  
Author(s):  
S. R. Kurtz ◽  
A. A. Allerman ◽  
D. D. Koleske ◽  
G. M. Peake

2014 ◽  
Vol 1058 ◽  
pp. 132-135
Author(s):  
Meng Lv ◽  
Guo Lin Yu ◽  
Yong Gang Xu ◽  
Tie Lin ◽  
Ning Dai ◽  
...  

Magnetotransport properties are investigated in two-dimensional electron gas (2DEG) of AlGaN/GaN heterostructure, including the Drude conductance, the Shubnikov-de Haas (SdH) oscillations and the change with temperature, the electron-electron interaction (EEI) and the change with temperature, the weak antilocalization (WAL) and the change with temperature etc.


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