Effect of growth temperature on strain barrier for metalorganic vapor phase epitaxy grown strained InGaAs quantum well with lattice matched InGaAsP barriers

2002 ◽  
Vol 91 (9) ◽  
pp. 5875-5881 ◽  
Author(s):  
T. K. Sharma ◽  
B. M. Arora ◽  
S. Kumar ◽  
M. R. Gokhale
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched ◽  
Ingaas Quantum Well

Lattice-Latching Effect in Metalorganic Vapor Phase Epitaxy Growth of InGaAsN Film Lattice-Matched to Bulk InGaAs Substrate

2010 ◽  
Vol 49 (4) ◽  
pp. 040202 ◽  
Author(s):  
Sakuntam Sanorpim ◽  
Ryuji Katayama ◽  
Kentaro Onabe ◽  
Noritaka Usami ◽  
Kazuo Nakajima
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Lattice Matched

Studies of GaxIn1−xP layers grown by metalorganic vapor phase epitaxy; Effects of V/III ratio and growth temperature

1986 ◽  
Vol 77 (1-3) ◽  
pp. 367-373 ◽  
Author(s):  
A. Gomyo ◽  
K. Kobayashi ◽  
S. Kawata ◽  
I. Hino ◽  
T. Suzuki ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure
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