Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure

MOVPE Growth of High Quality GaN/InGaN Single Quantum Well Structure Using Misoriented SiC Substrate

1996 ◽  
Author(s):  
Akihiko ISHIBASHI ◽  
Hidemi TAKEISHI ◽  
Nobuyuki UEMURA ◽  
Masahiro KUME ◽  
Yuzaburoh BAN
Keyword(s):  
Quantum Well ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure ◽  
Movpe Growth

Growth of BGaN/AlGaN multi-quantum-well structure by metalorganic vapor phase epitaxy

2000 ◽  
Vol 221 (1-4) ◽  
pp. 378-381 ◽  
Author(s):  
Makoto Kurimoto ◽  
Takayoshi Takano ◽  
Jun Yamamoto ◽  
Yoshiyuki Ishihara ◽  
Masato Horie ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Structure ◽  
Multi Quantum Well
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