Effect of tensile strained InyGa1 − yAs spacer/barrier on the optical quality of compressive strained InxGa1 − xAs quantum well grown by metalorganic vapor-phase epitaxy

1997 ◽  
Vol 178 (4) ◽  
pp. 431-437 ◽  
Author(s):  
Oleg Laboutine ◽  
Ahngoo Choo ◽  
Seongheon Kim ◽  
Namhyun Kim ◽  
Hyeongsoo Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Optical Quality ◽  
Vapor Phase Epitaxy

Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate

1997 ◽  
Vol 36 (Part 1, No. 3B) ◽  
pp. 1961-1965 ◽  
Author(s):  
Akihiko Ishibashi ◽  
Hidemi Takeishi ◽  
Nobuyuki Uemura ◽  
Masahiro Kume ◽  
Yasufumi Yabuuchi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Single Quantum ◽  
High Quality ◽  
Single Quantum Well ◽  
Quantum Well Structure
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