Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer

2002 ◽  
Vol 92 (5) ◽  
pp. 2248-2250 ◽  
Author(s):  
Chul Huh ◽  
Ji-Myon Lee ◽  
Dong-Joon Kim ◽  
Seong-Ju Park
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Light Emitting ◽  
Output Efficiency ◽  
Current Blocking Layer ◽  
Current Blocking

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

scholarly journals Use of a patterned current blocking layer to enhance the light output power of InGaN-based light-emitting diodes

2017 ◽  
Vol 25 (15) ◽  
pp. 17556 ◽  
Author(s):  
Jae-Seong Park ◽  
Young Hoon Sung ◽  
Jin-Young Na ◽  
Daesung Kang ◽  
Sun-Kyung Kim ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Blocking Layer ◽  
Light Output Power ◽  
Light Emitting ◽  
Current Blocking Layer ◽  
Current Blocking

Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple quantum well light-emitting diodes

2012 ◽  
Vol 100 (4) ◽  
pp. 041119 ◽  
Author(s):  
Dong-Yul Lee ◽  
Sang-Heon Han ◽  
Dong-Ju Lee ◽  
Jeong Wook Lee ◽  
Dong-Joon Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Piezoelectric Field

Effect of electron blocking layer on efficiency droop in InGaN/GaN multiple quantum well light-emitting diodes

2009 ◽  
Vol 94 (23) ◽  
pp. 231123 ◽  
Author(s):  
Sang-Heon Han ◽  
Dong-Yul Lee ◽  
Sang-Jun Lee ◽  
Chu-Young Cho ◽  
Min-Ki Kwon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Efficiency Droop ◽  
Multiple Quantum ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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