Hydrogenated amorphous silicon carbide deposition using electron cyclotron resonance chemical vapor deposition under high microwave power and strong hydrogen dilution

Amorphous Silicon ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Hydrogen Dilution ◽

Effects of microwave power on the structural and emission properties of hydrogenated amorphous silicon carbide deposited by electron cyclotron resonance chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.1344218 ◽

2001 ◽

Vol 89 (5) ◽

pp. 2699-2705 ◽

Cited By ~ 21

Author(s):

J. Cui ◽

Rusli ◽

S. F. Yoon ◽

M. B. Yu ◽

K. Chew ◽

...

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Microwave Power ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Improved hydrogenated amorphous silicon thin films by photon assisted microwave electron cyclotron resonance chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.122954 ◽

1999 ◽

Vol 74 (1) ◽

pp. 67-69 ◽

Cited By ~ 2

Author(s):

Y. J. Song ◽

W. A. Anderson

Keyword(s):

Thin Films ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Silicon Thin Films ◽

RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition

10.1117/12.304500 ◽

1998 ◽

Author(s):

Yoshiyuki Hirano ◽

Fumio Sato ◽

Ahalapitiya H. Jayatissa ◽

Hiroshi Ohtake ◽

Kuniharu Takizawa

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Chemical Vapor ◽

Electron Cyclotron ◽

Hydrogenated Amorphous ◽

Resonance Plasma

Hydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powers

Thin Solid Films ◽

10.1016/j.tsf.2019.137534 ◽

2019 ◽

Vol 690 ◽

pp. 137534 ◽

Cited By ~ 1

Author(s):

Hugo da S. Alvarez ◽

Audrey R. Silva ◽

Frederico H. Cioldin ◽

Luana C.J. Espindola ◽

José A. Diniz

Keyword(s):

Radio Frequency ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Cyclotron Resonance ◽

Room Temperature ◽

Chemical Vapor ◽

The influence of hydrogen dilution ratio on the crystallization of hydrogenated amorphous silicon films prepared by plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/s0040-6090(96)09573-9 ◽

1997 ◽

Vol 302 (1-2) ◽

pp. 17-24 ◽

Cited By ~ 13

Author(s):

Hae-Yeol Kim ◽

Ki-Young Lee ◽

Jai-Young Lee

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Silicon Films ◽

Dilution Ratio ◽

Hydrogen Dilution ◽

Proceedings of the 2015 4th International Conference on Sustainable Energy and Environmental Engineering ◽

Hydrogenated amorphous silicon carbide thin films deposited by plasma-enhanced chemical vapor deposition

10.2991/icseee-15.2016.129 ◽

2016 ◽

Author(s):

Shiguo Yang ◽

Guozhi Wen ◽

Yang Luo ◽

Yi Liang

Keyword(s):

Thin Films ◽

Silicon Carbide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nucleation and growth of hydrogenated amorphous silicon‐carbon alloys: Effect of hydrogen dilution in plasma‐enhanced chemical vapor deposition

Applied Physics Letters ◽

10.1063/1.110535 ◽

1993 ◽

Vol 63 (16) ◽

pp. 2228-2230 ◽

Cited By ~ 12

Author(s):

Yiwei Lu ◽

Ilsin An ◽

M. Gunes ◽

M. Wakagi ◽

C. R. Wronski ◽

...

Keyword(s):

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nucleation And Growth ◽

Hydrogen Dilution ◽

Silicon Carbon ◽

Properties of hydrogenated amorphous silicon carbide films prepared by plasma-enhanced chemical vapor deposition

Thin Solid Films ◽

10.1016/0040-6090(89)90573-7 ◽

1989 ◽

Vol 177 (1-2) ◽

pp. 253-262 ◽

Cited By ~ 33

Author(s):

Dan Kuhman ◽

Steve Grammatica ◽

Frank Jansen

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ion beam-induced chemical vapor deposition with hexamethyldisilane for hydrogenated amorphous silicon carbide and silicon carbonitride films

Surface and Coatings Technology ◽

10.1016/s0257-8972(03)00130-0 ◽

2003 ◽

Vol 169-170 ◽

pp. 624-627 ◽

Cited By ~ 21

Author(s):

Takaomi Matsutani ◽

Tatsuya Asanuma ◽

Chang Liu ◽

Masato Kiuchi ◽

Takae Takeuchi

Keyword(s):

Silicon Carbide ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Ion Beam ◽

Chemical Vapor ◽

Silicon Carbonitride ◽

Changes of chemical structure of hydrogenated amorphous silicon carbide films with the application of radio-frequency bias voltages during chemical vapor deposition

Diamond and Related Materials ◽

10.1016/j.diamond.2016.03.006 ◽

2016 ◽

Vol 66 ◽

pp. 1-9 ◽

Cited By ~ 3

Author(s):

Haruhiko Ito ◽

Takeshi Ogaki ◽

Motoki Kumakura ◽

Shunsuke Saeki ◽

Tsuneo Suzuki ◽

...

Keyword(s):

Silicon Carbide ◽

Radio Frequency ◽

Amorphous Silicon ◽

Vapor Deposition ◽

Chemical Structure ◽

Chemical Vapor ◽