Influence of structural inhomogeneity on the luminescence properties of silicon nanocrystallites

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

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Effect of annealing temperature on luminescence properties of ZnWO 4 :Eu 3+ nanophosphor

Micro & Nano Letters ◽

10.1049/mnl.2018.5651 ◽

2019 ◽

Vol 14 (5) ◽

pp. 496-500 ◽

Cited By ~ 1

Author(s):

Chunyang Li ◽

Xiaodi Du ◽

Yurong Shi ◽

Zhenling Wang

Keyword(s):

Annealing Temperature ◽

Luminescence Properties

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Formation of Nanocrystalline Silicon in Tin-Doped Amorphous Silicon Films

Ukrainian Journal of Physics ◽

10.15407/ujpe65.3.236 ◽

2020 ◽

Vol 65 (3) ◽

pp. 236

Author(s):

R. M. Rudenko ◽

O. O. Voitsihovska ◽

V. V. Voitovych ◽

M. M. Kras’ko ◽

A. G. Kolosyuk ◽

...

Keyword(s):

Amorphous Silicon ◽

Crystalline Silicon ◽

Solid Phase ◽

Nanocrystalline Silicon ◽

Recrystallization Temperature ◽

Nanocrystalline Phase ◽

Silicon Phase ◽

Silicon Nanocrystallites ◽

Lower Temperature ◽

Two Stages

The process of crystalline silicon phase formation in tin-doped amorphous silicon (a-SiSn) films has been studied. The inclusions of metallic tin are shown to play a key role in the crystallization of researched a-SiSn specimens with Sn contents of 1–10 at% at temperatures of 300–500 ∘C. The crystallization process can conditionally be divided into two stages. At the first stage, the formation of metallic tin inclusions occurs in the bulk of as-precipitated films owing to the diffusion of tin atoms in the amorphous silicon matrix. At the second stage, the formation of the nanocrystalline phase of silicon occurs as a result of the motion of silicon atoms from the amorphous phase to the crystalline one through the formed metallic tin inclusions. The presence of the latter ensures the formation of silicon crystallites at a much lower temperature than the solid-phase recrystallization temperature (about 750 ∘C). A possibility for a relation to exist between the sizes of growing silicon nanocrystallites and metallic tin inclusions favoring the formation of nanocrystallites has been analyzed.

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