Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1589173 ◽

2003 ◽

Vol 94 (3) ◽

pp. 2046-2052 ◽

Author(s):

M. M. A. Hakim ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Computationally Efficient ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

Download Full-text

Direct Tunneling Gate Current in Strained-Si/SiGe Metal-Oxide-Semiconductor Structures

2006 International Conference on Electrical and Computer Engineering ◽

10.1109/icece.2006.355678 ◽

2006 ◽

Author(s):

A. N. M. Zainuddin ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Strained Si ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

Download Full-text

Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

Download Full-text

Reply to “Comment on ‘Unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering’ [J. Appl. Phys.92, 3724 (2002)]”

Journal of Applied Physics ◽

10.1063/1.1540222 ◽

2003 ◽

Vol 93 (5) ◽

pp. 3125-3126 ◽

Author(s):

Wu-yun Quan ◽

Dae M. Kim ◽

Myoung Kwan Cho

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

Download Full-text

Comment on “Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering” [J. Appl. Phys.92, 3724 (2002)]

Journal of Applied Physics ◽

10.1063/1.1540221 ◽

2003 ◽

Vol 93 (5) ◽

pp. 3123-3124 ◽

Author(s):

M. V. Fischetti

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

Download Full-text

Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.054103 ◽

2016 ◽

Vol 55 (5) ◽

pp. 054103 ◽

Author(s):

Naoki Kumagai ◽

Hiroshi Kimura ◽

Yasuhiko Onishi ◽

Mitsuo Okamoto ◽

Kenji Fukuda

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Slow Response ◽

Gate Current ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

Download Full-text

Unified compact theory of tunneling gate current in metal–oxide–semiconductor structures: Quantum and image force barrier lowering

Journal of Applied Physics ◽

10.1063/1.1504173 ◽

2002 ◽

Vol 92 (7) ◽

pp. 3724-3729 ◽

Author(s):

Wu-yun Quan ◽

Dae M. Kim ◽

Myoung Kwan Cho

Keyword(s):

Metal Oxide ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Semiconductor Structures

Download Full-text

Theory of direct tunneling current in metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1427398 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1400-1409 ◽

Author(s):

R. Clerc ◽

A. Spinelli ◽

G. Ghibaudo ◽

G. Pananakakis

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Analytical Model for Direct Tunneling Gate Current in Long-Channel Undoped Cylindrical Surrounding Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.024302 ◽

2013 ◽

Vol 52 (2R) ◽

pp. 024302 ◽

Author(s):

Ru Han ◽

Cong Li

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Current ◽

Direct Tunneling ◽

Surrounding Gate ◽

Download Full-text

Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1403658 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1831-1833 ◽

Author(s):

Jing Wang ◽

Yutao Ma ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Metal Oxide ◽

Function Method ◽

Airy Function ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

Download Full-text

Spatially Resolved Transport Studies and Microscopy of Ultrathin Metal-Oxide-Semiconductor Structures

10.21236/ada329531 ◽

1997 ◽

Author(s):

R. Ludeke

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Spatially Resolved ◽

Transport Studies

Download Full-text