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Theory of direct tunneling current in metal–oxide–semiconductor structures
Journal of Applied Physics
◽
10.1063/1.1427398
◽
2002
◽
Vol 91
(3)
◽
pp. 1400-1409
◽
Cited By ~ 49
Author(s):
R. Clerc
◽
A. Spinelli
◽
G. Ghibaudo
◽
G. Pananakakis
Keyword(s):
Metal Oxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Direct Tunneling
◽
Direct Tunneling Current
Download Full-text
Related Documents
Cited By
References
Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures
Journal of Applied Physics
◽
10.1063/1.1985976
◽
2005
◽
Vol 98
(2)
◽
pp. 024506
◽
Cited By ~ 6
Author(s):
E. P. Nakhmedov
◽
K. Wieczorek
◽
H. Burghardt
◽
C. Radehaus
Keyword(s):
Metal Oxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Quantum Mechanical
◽
Semiconductor Structures
◽
Direct Tunneling
◽
Mechanical Study
◽
Quantum Mechanical Study
◽
Direct Tunneling Current
Download Full-text
Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures
Applied Physics Letters
◽
10.1063/1.1403658
◽
2001
◽
Vol 79
(12)
◽
pp. 1831-1833
◽
Cited By ~ 9
Author(s):
Jing Wang
◽
Yutao Ma
◽
Lilin Tian
◽
Zhijian Li
Keyword(s):
Metal Oxide
◽
Function Method
◽
Airy Function
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
◽
Direct Tunneling
◽
Direct Tunneling Current
Download Full-text
Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary
Journal of Applied Physics
◽
10.1063/1.2202196
◽
2006
◽
Vol 99
(10)
◽
pp. 104501
◽
Cited By ~ 6
Author(s):
E. Nadimi
◽
C. Radehaus
◽
E. P. Nakhmedov
◽
K. Wieczorek
Keyword(s):
Metal Oxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Semiconductor Structure
◽
Oxide Semiconductor
◽
Open Boundary
◽
Direct Tunneling
◽
Direct Tunneling Current
◽
Metal Oxide Semiconductor Structure
Download Full-text
An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film
Japanese Journal of Applied Physics
◽
10.1143/jjap.39.424
◽
2000
◽
Vol 39
(Part 1, No. 2A)
◽
pp. 424-431
◽
Cited By ~ 1
Author(s):
Hiroshi Nakatsuji
◽
Yasuhisa Omura
Keyword(s):
Metal Oxide
◽
Silicon Dioxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Silicon Dioxide Film
◽
Direct Tunneling
◽
Semiconductor System
◽
Direct Tunneling Current
◽
Dioxide Film
Download Full-text
Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors
Applied Physics Letters
◽
10.1063/1.126789
◽
2000
◽
Vol 76
(25)
◽
pp. 3810-3812
◽
Cited By ~ 62
Author(s):
Hisao Kawaura
◽
Toshitsugu Sakamoto
◽
Toshio Baba
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Shallow Junction
◽
Direct Tunneling
◽
Direct Tunneling Current
Download Full-text
Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.1527710
◽
2003
◽
Vol 93
(2)
◽
pp. 1064-1068
◽
Cited By ~ 13
Author(s):
Kingsuk Maitra
◽
Navakanta Bhat
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Analytical Approach
◽
Field Effect Transistors
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Oxides
◽
Direct Tunneling
◽
Direct Tunneling Current
Download Full-text
Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors
Japanese Journal of Applied Physics
◽
10.1143/jjap.42.3364
◽
2003
◽
Vol 42
(Part 1, No. 6A)
◽
pp. 3364-3367
◽
Cited By ~ 1
Author(s):
Hideyuki Iwata
◽
Toshihiro Matsuda
◽
Takashi Ohzone
Keyword(s):
Metal Oxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Two Dimensional
◽
Consistent Calculation
◽
Direct Tunneling
◽
Self Consistent
◽
Direct Tunneling Current
Download Full-text
Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
Applied Physics Letters
◽
10.1063/1.123060
◽
1999
◽
Vol 74
(3)
◽
pp. 457-459
◽
Cited By ~ 183
Author(s):
Leonard F. Register
◽
Elyse Rosenbaum
◽
Kevin Yang
Keyword(s):
Metal Oxide
◽
Polycrystalline Silicon
◽
Semiconductor Devices
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Analytic Model
◽
Direct Tunneling
◽
Direct Tunneling Current
Download Full-text
Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures
Journal of Applied Physics
◽
10.1063/1.1589173
◽
2003
◽
Vol 94
(3)
◽
pp. 2046-2052
◽
Cited By ~ 4
Author(s):
M. M. A. Hakim
◽
A. Haque
Keyword(s):
Metal Oxide
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Quantum Mechanical
◽
Computationally Efficient
◽
Gate Current
◽
Semiconductor Structures
◽
Direct Tunneling
Download Full-text
Two components of tunneling current in metal‐oxide‐semiconductor structures
Applied Physics Letters
◽
10.1063/1.94145
◽
1983
◽
Vol 43
(1)
◽
pp. 106-108
◽
Cited By ~ 66
Author(s):
B. Eitan
◽
A. Kolodny
Keyword(s):
Metal Oxide
◽
Tunneling Current
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Semiconductor Structures
Download Full-text
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