Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Theory of direct tunneling current in metal–oxide–semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1427398 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1400-1409 ◽

Author(s):

R. Clerc ◽

A. Spinelli ◽

G. Ghibaudo ◽

G. Pananakakis

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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Modified Airy function method for modeling of direct tunneling current in metal–oxide–semiconductor structures

Applied Physics Letters ◽

10.1063/1.1403658 ◽

2001 ◽

Vol 79 (12) ◽

pp. 1831-1833 ◽

Author(s):

Jing Wang ◽

Yutao Ma ◽

Lilin Tian ◽

Zhijian Li

Keyword(s):

Metal Oxide ◽

Function Method ◽

Airy Function ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Direct Tunneling Current

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Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

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Computationally efficient quantum-mechanical technique to calculate the direct tunneling gate current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1589173 ◽

2003 ◽

Vol 94 (3) ◽

pp. 2046-2052 ◽

Author(s):

M. M. A. Hakim ◽

A. Haque

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Computationally Efficient ◽

Gate Current ◽

Semiconductor Structures ◽

Direct Tunneling

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Calculation of the direct tunneling current in a metal-oxide-semiconductor structure with one-side open boundary

Journal of Applied Physics ◽

10.1063/1.2202196 ◽

2006 ◽

Vol 99 (10) ◽

pp. 104501 ◽

Author(s):

E. Nadimi ◽

C. Radehaus ◽

E. P. Nakhmedov ◽

K. Wieczorek

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Open Boundary ◽

Direct Tunneling ◽

Direct Tunneling Current ◽

Metal Oxide Semiconductor Structure

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An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.424 ◽

2000 ◽

Vol 39 (Part 1, No. 2A) ◽

pp. 424-431 ◽

Author(s):

Hiroshi Nakatsuji ◽

Yasuhisa Omura

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Dioxide Film ◽

Direct Tunneling ◽

Semiconductor System ◽

Direct Tunneling Current ◽

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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Analytical approach to integrate the different components of direct tunneling current through ultrathin gate oxides in n-channel metal–oxide–semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1527710 ◽

2003 ◽

Vol 93 (2) ◽

pp. 1064-1068 ◽

Author(s):

Kingsuk Maitra ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Analytical Approach ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Direct Tunneling ◽

Direct Tunneling Current

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Two-Dimensional Self-Consistent Calculation of Gate Direct Tunneling Current in Metal–Oxide–Semiconductor Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.3364 ◽

2003 ◽

Vol 42 (Part 1, No. 6A) ◽

pp. 3364-3367 ◽

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Two Dimensional ◽

Consistent Calculation ◽

Direct Tunneling ◽

Self Consistent ◽

Direct Tunneling Current

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