Influence of ion bombardment on transport properties and exchange bias in magnetic tunnel junctions

2003 ◽  
Vol 94 (9) ◽  
pp. 5556-5558 ◽  
Author(s):  
J. Schmalhorst ◽  
V. Höink ◽  
G. Reiss ◽  
D. Engel ◽  
D. Junk ◽  
...  
2005 ◽  
Vol 86 (15) ◽  
pp. 152102 ◽  
Author(s):  
V. Höink ◽  
M. D. Sacher ◽  
J. Schmalhorst ◽  
G. Reiss ◽  
D. Engel ◽  
...  

2020 ◽  
Vol 59 (10) ◽  
pp. 103001
Author(s):  
Aurelie Spiesser ◽  
Shintaro Kon ◽  
Yukiko Yasukawa ◽  
Shinji Yuasa ◽  
Hiroshi Imamura ◽  
...  

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.


2013 ◽  
Vol 103 (5) ◽  
pp. 052402 ◽  
Author(s):  
Léa Cuchet ◽  
Bernard Rodmacq ◽  
Stéphane Auffret ◽  
Ricardo C. Sousa ◽  
Clarisse Ducruet ◽  
...  

2005 ◽  
Vol 98 (10) ◽  
pp. 103504 ◽  
Author(s):  
J. C. A. Huang ◽  
C. Y. Hsu ◽  
Y. F. Liao ◽  
M. Z. Lin ◽  
C. H. Lee

2011 ◽  
Vol 25 (11) ◽  
pp. 1493-1499
Author(s):  
JIN BAO ◽  
XIAO-GUANG XU ◽  
XIAO-QI LI ◽  
DE-LIN ZHANG ◽  
YONG JIANG

A series of Co 90 Fe 10/ Ru/Co 90 Fe 10/ FeMn multilayers were fabricated by DC magnetron sputtering. Our results show that the in-plane and perpendicular exchange-bias fields H ex of the multilayers can be controlled by the continuity of the Ru layer. Increasing the continuity of the Ru layer increases the in-plane H ex and decreases the perpendicular one. When the thickness of the Ru layer is 0.5 nm, the perpendicular H ex reaches as high as 682 Oe. The perpendicular exchange-bias induced by a discontinuous underlayer may be applied in future perpendicular anisotropic spin valves or magnetic tunnel junctions.


2017 ◽  
Author(s):  
S.K. Narayananellore ◽  
N. Doko ◽  
N. Matsuo ◽  
H. Saito ◽  
S. Yuasa

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