ion bombardment
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2022 ◽  
Vol 1049 ◽  
pp. 192-197
Author(s):  
Muxtor K. Karimov ◽  
F.O. Kuryozov ◽  
Sh.R. Sadullaev ◽  
M.U. Otabaev ◽  
S.B. Bobojonova

In this paper presents the computer simulation results on the investigations of the ion scattering processe on the defect InP(001)<110>,<ī10> surface under low-energy grazing ion bombardment have been presented. The peculiarities trajectories of the scattered ions from surface defect, atomic chain and semichannel have been investigated by computer simulation. It was found some trajectories nearby surface atomic chain which have loop shape and a line form. At grazing ion incidence, from a correlation of the experimental and calculated energy distributions of the scattered particles, one may determine a spatial extension of the missing atom on the monocrystal surface damaged by the ion bombardment.


Author(s):  
Irina Doschechkina

Based on theoretical and experimental research in the fields of solid-state physics and physical materials science, it is proved that the surface layer of a solid body, which is deformed, is an independent functional subsystem and radically affects large-scale levels of plastic flow and destruction of the product as a whole. As is known, the most effective method of improving the performance of products is the grinding of grain, because it is the grain boundary (substructural) mechanism of strengthening which provides an increase in the structural strength of the product. In this regard, special attention is paid to submicro- and nano-structuring of the surface. Goal. The aim of the work is to study the process of structure formation of the surface layer under the action of ion bombardment (IB) and its effect on the properties of products taking into account the scale factor. To achieve this goal, the following tasks were set: to evaluate the characteristics of the surface microstructure after IB and to study its tensile behavior in cylindrical and flat samples of low-carbon steel in order to take into account the scale factor in changing their properties. The submicro-structuring of the surface by ion bombardment is carried out in the work and its influence on the behavior of products during tensile deformation is investigated. It is established that the presence of a thin modified layer (with a constant core) significantly changes the properties of the product under force. The decisive role belongs to the contribution of the surface layer (scale factor) – the ratio of the area of the modified layer to the volume of the product: if it is <1 the effect of hardening is better realized while maintaining plasticity, and if ˃ 1, it is a significant effect of plasticization which maintains (or even increases) hardening.


Icarus ◽  
2021 ◽  
pp. 114830
Author(s):  
R. Martinez ◽  
A. Agnihotri ◽  
E.F. da Silveira ◽  
M.E. Palumbo ◽  
G. Strazzulla ◽  
...  

Author(s):  
Takumi Tominaga ◽  
Shinji Takayanagi ◽  
Takahiko Yanagitani

Abstract Scandium aluminum nitride (ScAlN) films are being actively researched to explore their potential for use in bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators because of their good piezoelectric properties. Sputtering is commonly used in ScAlN film deposition. Unfortunately, it has been reported that film quality metrics such as the crystallinity and piezoelectric properties can deteriorate before the Sc concentration reaches 43% without an isostructural phase transition. One reason for this is bombardment with negative ions generated from carbon and oxygen impurities in the Sc ingots. Because the number of negative ions increases during low-pressure sputtering deposition, their effect on film quality may be considerable. In this study, we investigated negative-ion bombardment of the substrate during sputtering deposition and its effects on ScAlN crystallinity and piezoelectric properties. Negative-ion energy distribution measurements indicated that many more negative ions collide with the substrate during ScAlN film deposition than during AlN deposition. In addition, decreasing the sputtering pressure further increased the number of negative ions and their energies. It is well known that film quality improves at low pressures because increasing the mean free path reduces thermalization and scattering of sputtered particles. Although, AlN crystallinity and piezoelectric properties improved at low pressures, the properties of ScAlN films deteriorated dramatically. Therefore, the results indicated that ion bombardment increase at low pressure adversely effects ScAlN crystal growth, deteriorating crystallinity and piezoelectric properties. ScAlN films may be improved further by suppressing negative-ion bombardment of the substrate.


Author(s):  
Z.B. Chen ◽  
X.G. Song ◽  
M. Dan ◽  
Y. Luo ◽  
B. Han

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
M. Mergenthaler ◽  
C. Müller ◽  
M. Ganzhorn ◽  
S. Paredes ◽  
P. Müller ◽  
...  

AbstractOne of the main limitations in state-of-the art solid-state quantum processors is qubit decoherence and relaxation due to noise from adsorbates on surfaces, impurities at interfaces, and material defects. For the field to advance towards full fault-tolerant quantum computing, a better understanding of these microscopic noise sources is therefore needed. Here, we use an ultra-high vacuum package to study the impact of vacuum loading, UV-light exposure, and ion irradiation treatments on relaxation and coherence times, as well as slow parameter fluctuations of flux tunable superconducting transmon qubits. The treatments studied do not significantly impact the relaxation rate Γ1 and the echo decay rate $${{{\Gamma }}}_{2,{{{\rm{SS}}}}}^{{{{\rm{e}}}}}$$ Γ 2 , SS e at the sweet spot, except for Ne ion bombardment which reduces Γ1. In contrast, flux noise parameters are improved by removing magnetic adsorbates from the chip surfaces with UV-light and NH3 treatments. Additionally, we demonstrate that SF6 ion bombardment can be used to adjust qubit frequencies in situ and post-fabrication without affecting qubit relaxation and coherence times at the sweet spot.


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