Effect of reactive gas condition on nonpolar AlN film growth on MnS/Si (100) by reactive DC sputtering

The effects of reactive gas flow conditions on nonpolar AlN film growth on MnS/Si (100) substrates using reactive DC magnetron sputtering were investigated. During AlN deposition at a substrate temperature of 750 °C, the MnS surface can be unintentionally nitrided, resulting in a decrease in the crystallinity of the AlN. Low temperature growth of the AlN layer at 300 °C prevents this nitridation and results in the crystallization of nonpolar AlN. A N2 flow equal to 30% of the Ar sputtering gas flow was found to improve the crystallinity of the nonpolar AlN and to reduce nitrogen defects, which play an important role in interfacial reactions. Nitrogen defects promote the formation of alloys such as AlMn and MnSi that degrade the interface and can significantly decompose the MnS. A higher proportion of N2 improves the nonpolar AlN crystallinity, reduces the concentration of defects and suppresses reactions at the AlN/MnS interface.

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Studies on Copper Nanometric-Film Deposited by an In-House Developed DC Magnetron Sputtering System

Copper nanofilms are extensively used in the field of material science research. Nanoparticles and nanostructures of copper have various utilities in the field of photocatalytic and sensor applications. The transition metal nanoparticles and nanostructures supply plenty free electrons which drastically enhances the optical and electrical properties compared to bulk material. Here, copper thin films have been deposited on glass slides and silicon substrates using an indigenously developed DC magnetron sputtering system. These depositions have been carried out at three different time spans keeping the magnetron discharge current, working vacuum and target to substrate distance unaltered. The objective of this work is to study the crystalline structure and measure the thickness of the copper nanofilm deposited at three different times. The synthesized films were characterized by using X-Ray Fluorescence (XRF), X-Ray Diffractometer (XRD) and Secondary Ion Mass Spectrometer (SIMS). Characteristic peaks of copper (111) along with Cu2O (110), (220) and (111) were obtained from the XRD pattern. The average grain size of the deposited films has been calculated using Debye-Scherrer equation. The film thickness ranging from 80-160 nm for various time spans were measured from depth profile analysis using SIMS data.

Получение текстурированных пленок FeCo(110) и FeCo(200) магнетронным распылением на постоянном токе

The results of study of bias voltage Ub and substrate temperature Ts influence on the texture of FeCo films with the thickness of 180 nm deposited on Si/SiO2 substrates by DC magnetron sputtering are presented. It is shown that the change of Ub from -250 V to ~ 80 V leads to the growth of films with (110) texture. Further change of Ub from 80 V to 250 V causes the growth of films having (200) texture. Films deposited at Ub = 0 and Ts = 60º – 300º C have (200) texture. Further increase of Ts results in the change of film texture to (110).

Formation tantalum coating on NiTi surface by magnetron sputtering technique

The materials of research the structure and morphology of the tantalum coating on the surface of the NiTi alloy in this work presents. Tantalum was deposited by the DC - magnetron sputtering method. The influence of the energy supplied to the magnetron on the formation of the Ta-coating is shown.Changes in the structure of the coating at different stages of its formation are shown.It was found that with a significant decrease in the energy supplied to the magnetron, tantalum is deposited more uniformly. Besides the gradient of mechanical stresses in the coating is reduced.

Characterization of TiZrN and TaZrN Nanocomposite Multilayer Coating Deposited via RF/DC Magnetron Sputtering on AISI4140 Steel

In this present research work, TiZrN and TaZrN multilayer coating was deposited on 4140 steel by RF/DC magnetron sputtering for comparative work also prepared in single layer. The flow rate ratio of Ar/N2 was set to 15 : 3 sccm and the thin film was prepared by the PVD (physical vapor deposition) method by RF/DC magnetron using a Ti-Zr and Ta-Zr target with a purity of 99.99%. The crystal structure, surface morphology microstructure, and component arrangements were explored by X-ray diffraction (XRD), scanning electron microscope (SEM), and atomic force microscopy (AFM). It has been found that the crystal structure, surface morphology, microstructure, and elemental composition of the membrane are strongly dependent on deposition parameters. It is mechanically characterized by corrosion and Vickers hardness. In AFM measurements, coarse cluster particles with increasing Ti and Ta values not only increase the average roughness (Ra) by 2.341 nm (200°C) and 2.951 nm (400°C) but also have a continuous average thickness which was shown to increase by 1.504 nm and 781.75 nm. With the increase of hardness, the roughness decreases correspondingly. The TiZrN multilayer microhardness augmented to 314 GPa at 200°C and 371 GPa for TaZrN (400°C).

Synthesis of TiB2-Ni3B nanocomposite coating by DC magnetron sputtering for corrosion-erosion protection

Significant contribution on corrosion-erosion resistance of Ni3B-TiB2 nanocomposite coating of 1µm of thickness, deposited by DC magnetron Sputtering on stainless steel 304 substrates was studied. Nickel phase (γ Ni) plus Ni3B-TiB2 phases were synthesized previously by Mechanical Alloying (MA). Solid cathode (76.2 mm of diameter and 3 mm of thickness) used to grow thin films was manufactured with the alloyed powders, applying a uniaxial load of 70 MPa at room temperature and sintered at 900° C for two hours. Microstructure and mechanical properties of the coatings were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), nanoindentation, and wear test with a ball-on-disc tribometer. Compact coating of Ni3B-TiB2 with a microstructure of prismatic crystals after annealing treatment, showing a uniform coating with good adherence and low friction coefficient of 0.5, correlated with a low roughness of Ra ≈ 0.0439±0.0069 µm. The average hardness of 537.4 HV (5265.0 MPa) and wear coefficient at room temperature of 2.552E-10 m2N-1 correspond with medium-hard phases with an elastic-plastic behavior suitable for fatigue applications. Geothermal fluid modified was synthesized in the lab with NaCl/Na2SO4 to evaluate the corrosion resistance of the films in a standard three electrodes cell, characterizing a corrosion rate of 0.0008 and 0.001 mm*year-1 at 25 and 80°C respectively during 86.4 ks (24 h) of exposition; showing a resistive coating without corrosion products and with good response to the geothermal environment.

Normal-state transport in superconducting NbN films on r-cut sapphire

High-quality thin NbN films are very crucial for realizing quantum devices. Here, we investigated electrical transport and noise properties of a series of thin NbN films of various thicknesses grown on r-cut sapphire substrate using a DC magnetron sputtering technique. The films exhibit non-uniform thickness dependences for superconducting transition temperature (Te ) and normal-state resistivity. Morphological characterization of NbN samples of various thicknesses reveals uniform structure in thin films and granular structure in thick films. By measuring transport and noise properties in a normal state, we observe that the granular structure of NbN films does not have a strong effect on resistivity and does not cause an additional source of current noise.