scholarly journals Auger Electron Spectroscopy Investigations of the Surface Chemical Composition of Vanadium, the Vanadium Oxides, and Oxidized Vanadium: Chemical Shift and Peak Intensity Analysis

1972 ◽  
Vol 56 (12) ◽  
pp. 6097-6103 ◽  
Author(s):  
F. J. Szalkowski ◽  
G. A. Somorjai
Keyword(s):  
Chemical Composition ◽  
Chemical Shift ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Vanadium Oxides ◽  
Surface Chemical ◽  
Intensity Analysis ◽  
Surface Chemical Composition ◽  
Peak Intensity

AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES

1989 ◽  
Vol 03 (11) ◽  
pp. 1655-1660 ◽  
Author(s):  
E.P. VALCHEVA ◽  
K.G. GERMANOVA ◽  
S.S. GEORGIEV
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Deposition Temperature ◽  
Auger Electron ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Native Oxide ◽  
Interfacial Region ◽  
Interface Formation

Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.

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