AES STUDY OF THE INTERFACE FORMATION IN PECVD SiO2-InSb STRUCTURES

1989 ◽  
Vol 03 (11) ◽  
pp. 1655-1660 ◽  
Author(s):  
E.P. VALCHEVA ◽  
K.G. GERMANOVA ◽  
S.S. GEORGIEV
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Deposition Temperature ◽  
Auger Electron ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Native Oxide ◽  
Interfacial Region ◽  
Interface Formation

Semiconductor-insulator structures prepared on InSb substrates by plasma-enchanced chemical vapour deposition of SiO 2 are investigated by means of Auger electron spectroscopy. The chemical composition of the oxide layer and the insulator-InSb interface formation are studied as a function of the deposition temperature. The conditions for the presence of native oxide in the interfacial region are estimated and discussed.

Auger electron spectroscopy study of pulsed-laser evaporated CdTe films on (100) GaAs

1987 ◽  
Vol 65 (8) ◽  
pp. 972-974 ◽  
Author(s):  
J. J. Dubowski ◽  
D. F. Mitchell ◽  
G. I. Sproule
Keyword(s):  
Chemical Composition ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Gaas Substrate ◽  
Auger Electron ◽  
Pulsed Laser ◽  
Growth Surface ◽  
Spectroscopy Study ◽  
Gaas Substrates ◽  
Cdte Films

Pulsed-laser evaporated CdTe films deposited on (100) GaAs substrates have been studied by Auger electron spectroscopy (AES). The depth dependence of chemical composition has been determined from sputtering profiles. The films had a constant chemical composition within the accuracy of AES. Thermal treatment of GaAs substrate at temperatures as low as 260 °C was found to be sufficient for obtaining and O- and C-free post-growth surface of GaAs. The width of the interfacial CdTe–GaAs region was ≤ 3 nm, and the interface was Te-rich. A possibility of forming the As2Te3 layer at the CdTe–GaAs interface has been demonstrated.

Mev Ion Induced Modification of The Native Oxide of Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
R.L. Headrick ◽  
L.E. Seiberling
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Concentration ◽  
Native Oxide ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis

ABSTRACTWe have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.

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