InGaN∕GaN single-quantum-well light-emitting diodes optical output efficiency dependence on the properties of the barrier layer separating the active and p-layer regions

2004 ◽  
Vol 84 (25) ◽  
pp. 5252-5254 ◽  
Author(s):  
D. I. Florescu ◽  
J. C. Ramer ◽  
D. S. Lee ◽  
E. A. Armour
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pp. 052103 ◽  
Author(s):  
Yoshinobu Kawaguchi ◽  
Shih-Chieh Huang ◽  
Robert M. Farrell ◽  
Yuji Zhao ◽  
James S. Speck ◽  
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2002 ◽  
Vol 81 (16) ◽  
pp. 2938-2940 ◽  
Author(s):  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
M. Shatalov ◽  
E. Kuokstis ◽  
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2012 ◽  
Vol 5 (6) ◽  
pp. 062103 ◽  
Author(s):  
Chih-Chien Pan ◽  
Shinichi Tanaka ◽  
Feng Wu ◽  
Yuji Zhao ◽  
James S. Speck ◽  
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2010 ◽  
Vol 530 (1) ◽  
pp. 131/[287]-136/[292]
Author(s):  
Jung Soo Park ◽  
Tae Jin Park ◽  
Woo Sik Jeon ◽  
Gyeong Heon Kim ◽  
Jae Hyung Yu ◽  
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2013 ◽  
Vol 6 (9) ◽  
pp. 092104 ◽  
Author(s):  
Nathan A. Pfaff ◽  
Kathryn M. Kelchner ◽  
Daniel F. Feezell ◽  
Shuji Nakamura ◽  
Steven P. DenBaars ◽  
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2002 ◽  
Vol 81 (19) ◽  
pp. 3666-3668 ◽  
Author(s):  
V. Adivarahan ◽  
S. Wu ◽  
A. Chitnis ◽  
R. Pachipulusu ◽  
V. Mandavilli ◽  
...  

2016 ◽  
Vol 108 (6) ◽  
pp. 061105 ◽  
Author(s):  
N. G. Young ◽  
R. M. Farrell ◽  
S. Oh ◽  
M. Cantore ◽  
F. Wu ◽  
...  

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