Time Domain Terahertz Spectroscopy of the Magnetic Field Induced Metal-Insulator Transition in n:InSb

2005 ◽  
Author(s):  
J. Y. Sohn
Keyword(s):  
Magnetic Field ◽  
Time Domain ◽  
Terahertz Spectroscopy ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Time Domain Terahertz Spectroscopy ◽  
The Magnetic Field

Magnetoresistance of TTF-TCNQ

1975 ◽  
Vol 53 (17) ◽  
pp. 1593-1605 ◽  
Author(s):  
T. Tiedje ◽  
J. F. Carolan ◽  
A. J. Berlinsky ◽  
L. Weiler
Keyword(s):  
Magnetic Field ◽  
Applied Field ◽  
Energy Gap ◽  
Electronic Energy ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Peierls Transition ◽  
Scattering Time ◽  
The Magnetic Field

The magnetoresistance of TTF-TCNQ has been measured for currents along the crystallographic b axis in static fields of 50 kOe for temperatures between 17 and 98 K. For [Formula: see text] the magnetoresistance Δρ/ρ = [ρ(50 kOe) − ρ(0)]/ρ(0) is less than 0.1% in magnitude. There is a peak of about −1.4% at 52.8 ± 0.2 K. Below 50 K, Δρ/ρ is small and negative and is described reasonably well by the formula Δρ/ρ = −(1/2)(μBH/kT)2. At all temperatures Δρ/ρ was found to be approximately independent of the orientation of the applied field with respect to the current. The high temperature behavior is consistent with that expected for a metal in the short scattering time limit [Formula: see text]. We attribute the peak at 52.8 K to the suppression of the metal–insulator transition by the magnetic field, and we show why such behavior would be expected for a Peierls transition. In the low temperature region the crystal acts like a small gap semiconductor for which the –T−2 dependence of Δρ/ρ is easily understood. We note that the peak in the magnetoresistance at 52.8 K strongly suggests that the electronic energy gap goes to zero at this temperature. One is then led to conclude that the decrease in the conductivity between 58 and 53 K is due to resistive fluctuations above the metal–insulator transition.

Pressure and Light Induced Metastability Effects near the Magnetic Field Inudced Metal Insulator Transition in n-GaAs

1991 ◽  
Vol 65-66 ◽  
pp. 409-414
Author(s):  
A. Kadri ◽  
Jean Claude Portal ◽  
E. Ranz ◽  
K. Zitouni ◽  
N. Saidi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Magnetic Field

Metal–insulator transition induced by the magnetic field in n-type GaSb

2005 ◽  
Vol 136 (2) ◽  
pp. 126-131 ◽  
Author(s):  
C. Ghezzi ◽  
R. Magnanini ◽  
A. Parisini
Keyword(s):  
Magnetic Field ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
The Magnetic Field
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