Anomalous negative bias temperature instability behavior in p-channel metal-oxide-semiconductor field-effect transistors with HfSiON∕SiO2 gate stack
2006 ◽
Vol 45
(4B)
◽
pp. 3064-3069
◽
2014 ◽
Vol 43
(4)
◽
pp. 1207-1213
◽
2007 ◽
Vol 46
(4B)
◽
pp. 2011-2014
◽
2013 ◽
Vol 52
(3R)
◽
pp. 036503
◽
2007 ◽
Vol 46
(4B)
◽
pp. 1874-1878
◽