Dual nonlinear dielectric resonance and strong natural resonance in Ni/ZnO nanocapsules

2009 ◽  
Vol 94 (5) ◽  
pp. 053119 ◽  
Author(s):  
X. G. Liu ◽  
J. J. Jiang ◽  
D. Y. Geng ◽  
B. Q. Li ◽  
Z. Han ◽  
...  
2013 ◽  
Vol 202 ◽  
pp. 320-323 ◽  
Author(s):  
Guang-Sheng Wang ◽  
Bo Wen ◽  
Shuai He ◽  
Lin Guo ◽  
Mao-Sheng Cao

Author(s):  
I.N. Ivanova ◽  
◽  
A.B. Kleschenkov ◽  
A.M. Lerer ◽  
V.V. Makhno ◽  
...  

Author(s):  
Norimichi Chinone ◽  
Yasuo Cho

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.


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