Charge-transition levels of oxygen vacancy as the origin of device instability in HfO2 gate stacks through quasiparticle energy calculations

2009 ◽  
Vol 94 (12) ◽  
pp. 122901 ◽  
Author(s):  
Eun-Ae Choi ◽  
K. J. Chang
Keyword(s):  
Oxygen Vacancy ◽  
Gate Stacks ◽  
Energy Calculations ◽  
Quasiparticle Energy

scholarly journals Surface Oxygen Vacancy Formation Energy Calculations in 34 Orientations of β-Ga2O3 and θ-Al2O3

2020 ◽  
Vol 124 (19) ◽  
pp. 10509-10522 ◽  
Author(s):  
Yoyo Hinuma ◽  
Takashi Kamachi ◽  
Nobutsugu Hamamoto ◽  
Motoshi Takao ◽  
Takashi Toyao ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Formation Energy ◽  
Vacancy Formation Energy ◽  
Vacancy Formation ◽  
Surface Oxygen ◽  
Energy Calculations ◽  
Surface Oxygen Vacancy ◽  
Oxygen Vacancy Formation

Impact of cyclic plasma treatment on oxygen vacancy defects in TiN/HfZrO/SiON/Si gate stacks

2015 ◽  
Vol 106 (19) ◽  
pp. 193508 ◽  
Author(s):  
Md Nasir Uddin Bhuyian ◽  
S. Poddar ◽  
D. Misra ◽  
K. Tapily ◽  
R. D. Clark ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Plasma Treatment ◽  
Gate Stacks ◽  
Vacancy Defects

scholarly journals Exciting prospects for solids: Exact-exchange based functionals meet quasiparticle energy calculations

2008 ◽  
Vol 245 (5) ◽  
pp. 929-945 ◽  
Author(s):  
Patrick Rinke ◽  
Abdallah Qteish ◽  
Jörg Neugebauer ◽  
Matthias Scheffler
Keyword(s):  
Energy Calculations ◽  
Exact Exchange ◽  
Quasiparticle Energy

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

2008 ◽  
Vol 92 (13) ◽  
pp. 132911 ◽  
Author(s):  
Peter Broqvist ◽  
Audrius Alkauskas ◽  
Alfredo Pasquarello
Keyword(s):  
Oxygen Vacancy ◽  
Fermi Level ◽  
Gate Stacks ◽  
Fermi Level Pinning ◽  
Band Alignments ◽  
Defect Levels
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