scholarly journals Optical Properties Of Metastable Shallow Acceptors In Mg-Doped GaN Layers Grown By Metal-Organic Vapor Phase Epitaxy

2010 ◽  
Author(s):  
G. Pozina ◽  
C. Hemmingsson ◽  
J. P. Bergman ◽  
T. Kawashima ◽  
H. Amano ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Shallow Acceptors ◽  
Mg Doped

Effect of Boron Incorporation on Structural and Optical Properties of AlN Layers Grown by Metal-Organic Vapor Phase Epitaxy

2018 ◽  
Vol 215 (21) ◽  
pp. 1800282 ◽  
Author(s):  
Masataka Imura ◽  
Yuichi Ota ◽  
Ryan G. Banal ◽  
Meiyong Liao ◽  
Yoshiko Nakayama ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties ◽  
Organic Vapor ◽  
Metal Organic

Mg-doped high-quality AlxGa1–xN (x=0-1) grown by high-temperature metal-organic vapor phase epitaxy

2007 ◽  
Vol 4 (7) ◽  
pp. 2502-2505 ◽  
Author(s):  
M. Imura ◽  
N. Kato ◽  
N. Okada ◽  
K. Balakrishnan ◽  
M. Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped

Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy

1998 ◽  
Vol 3 ◽  
Author(s):  
S. Haffouz ◽  
B. Beaumont ◽  
Pierre Gibart
Keyword(s):  
Vapor Phase ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
The Other ◽  
Organic Vapor ◽  
Lateral Overgrowth ◽  
Metal Organic ◽  
Si Doped ◽  
Image Position ◽  
Mg Doped

Metalorganic vapor phase epitaxy was used to achieve selective regrowth of undoped, Mg- and Si-doped GaN on a silicon nitride patterned mask, capping a GaN epitaxial layer deposited on (0001) sapphire substrate. Hexagonal openings in the mask defined into 10 µm diameter circles separated by 5µm were used as a pattern for the present study. Uniform undoped and Mg-doped GaN hexagonal pyramids, delimited by C (0001) and R {101} facets, were achieved with a good selectivity. Si-doped GaN hexagonal pyramids delimited by vertical {100} facets and (0001) top facet were obtained for a high SiH4 flow rate in the vapor phase. We found that the GaN growth rates VR and VC, measured in the R <101> and C <0001> directions respectively, were drastically affected by the Mg and Si incorporation. By adjusting the Mg partial pressure in the growth chamber, the VR/VC ratio can be increased. Hence, the delimiting top C facet do not vanish as usually observed in undoped GaN selective regrowth but conversely expands. On the other hand, under proper growth conditions, 20µm-high Si-doped GaN columns were obtained.

Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy

2000 ◽  
Vol 76 (7) ◽  
pp. 876-878 ◽  
Author(s):  
Shigeo Yamaguchi ◽  
Michihiko Kariya ◽  
Shugo Nitta ◽  
Tetsuya Takeuchi ◽  
Christian Wetzel ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Effects of growth pressure on AlGaN and Mg-doped GaN grown using multiwafer metal organic vapor phase epitaxy system

2004 ◽  
Vol 272 (1-4) ◽  
pp. 348-352 ◽  
Author(s):  
H. Tokunaga ◽  
A. Ubukata ◽  
Y. Yano ◽  
A. Yamaguchi ◽  
N. Akutsu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Growth Pressure ◽  
Organic Vapor ◽  
Metal Organic ◽  
Mg Doped

Structural and optical properties of semipolar AlGaN grown on sapphire by metal–organic vapor phase epitaxy

2013 ◽  
Vol 367 ◽  
pp. 42-47 ◽  
Author(s):  
J. Stellmach ◽  
F. Mehnke ◽  
M. Frentrup ◽  
C. Reich ◽  
J. Schlegel ◽  
...  
Keyword(s):  
Optical Properties ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Structural And Optical Properties ◽  
Organic Vapor ◽  
Metal Organic
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