Nanostructure determines the intensity-dependence of open-circuit voltage in plastic solar cells

2010 ◽  
Vol 108 (8) ◽  
pp. 084320 ◽  
Author(s):  
Obadiah G. Reid ◽  
Hao Xin ◽  
Samson A. Jenekhe ◽  
David S. Ginger
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Intensity Dependence ◽  
Plastic Solar Cells

scholarly journals The influence of materials work function on the open circuit voltage of plastic solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 368-372 ◽  
Author(s):  
C.J Brabec ◽  
A Cravino ◽  
D Meissner ◽  
N.S Sariciftci ◽  
M.T Rispens ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Plastic Solar Cells

scholarly journals Measurement of band offsets and shunt resistance in CdTe solar cells through temperature and intensity dependence of open circuit voltage and photoluminescence

Solar Energy ◽  
2019 ◽  
Vol 189 ◽  
pp. 389-397 ◽  
Author(s):  
Craig H. Swartz ◽  
Sadia R. Rab ◽  
Sanjoy Paul ◽  
Maikel F.A.M. van Hest ◽  
Benjia Dou ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Shunt Resistance ◽  
Band Offsets ◽  
Intensity Dependence ◽  
Cdte Solar Cells

scholarly journals Light intensity dependence of open-circuit voltage of polymer:fullerene solar cells

2005 ◽  
Vol 86 (12) ◽  
pp. 123509 ◽  
Author(s):  
L. J. A. Koster ◽  
V. D. Mihailetchi ◽  
R. Ramaker ◽  
P. W. M. Blom
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Intensity Dependence

Light intensity dependence of open-circuit voltage and short-circuit current of polymer/fullerene solar cells

2006 ◽  
Author(s):  
L. Jan A. Koster ◽  
Valentin D. Mihailetchi ◽  
Robert Ramaker ◽  
Hangxing Xie ◽  
Paul W. Blom
Keyword(s):  
Solar Cells ◽  
Light Intensity ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Intensity Dependence

scholarly journals Origin of the Open Circuit Voltage of Plastic Solar Cells

2001 ◽  
Vol 11 (5) ◽  
pp. 374-380 ◽  
Author(s):  
C. J. Brabec ◽  
A. Cravino ◽  
D. Meissner ◽  
N. S. Sariciftci ◽  
T. Fromherz ◽  
...  
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Plastic Solar Cells

scholarly journals Temperature and intensity dependence of the open-circuit voltage of InGaN/GaN multi-quantum well solar cells

2021 ◽  
Vol 230 ◽  
pp. 111253
Author(s):  
Matthias Auf der Maur ◽  
Gilad Moses ◽  
Jeffrey M. Gordon ◽  
Xuanqi Huang ◽  
Yuji Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Intensity Dependence ◽  
Multi Quantum Well

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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