Deep‐level photoluminescence studies on Si‐doped, metalorganic chemical vapor deposition grown AlxGa1−xAs

1991 ◽  
Vol 69 (5) ◽  
pp. 3266-3277 ◽  
Author(s):  
E. P. Visser ◽  
X. Tang ◽  
R. W. Wieleman ◽  
L. J. Giling
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Si Doped ◽  
Photoluminescence Studies ◽  
Metalorganic Chemical

Electrical Characterization of As and [As+Si] doped GaN Grown by Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
M. Ahoujja ◽  
S. Elhamri ◽  
R. Berney ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Metalorganic Chemical

ABSTRACTElectrical properties of As, Si, and [As+Si] doped GaN films grown on sapphire substrates by low temperature metalorganic chemical vapor deposition have been investigated using temperature dependent Hall-effect and deep level transient spectroscopy measurements. The Hall measurements from the GaN layers show that the concentration decreases with arsine flow (4, 40, and 400 sccm) at all temperatures. The carrier concentration of the Si-doped GaN, on the other hand, increases with the incorporation of arsine flow. This behavior is attributed to the formation of AsGa antisites which act as double donors. A deep level at around 0.82 eV below the conduction in the band gap of As doped GaN is measured by DLTS and is tentatively assigned to arsenic on gallium antisite.

Photoluminescence studies in CuAlSe2epilayers grown by low‐pressure metalorganic chemical‐vapor deposition

1995 ◽  
Vol 77 (3) ◽  
pp. 1225-1232 ◽  
Author(s):  
S. Chichibu ◽  
S. Shirakata ◽  
S. Isomura ◽  
Y. Harada ◽  
M. Uchida ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Photoluminescence Studies ◽  
Metalorganic Chemical

Characteristics of Si‐doped GaAs epilayers grown by metalorganic chemical vapor deposition using a silane source

1987 ◽  
Vol 51 (20) ◽  
pp. 1634-1636 ◽  
Author(s):  
Chee‐Wee Liu ◽  
Sheng‐Li Chen ◽  
Jyh‐pyng Lay ◽  
Si‐Chen Lee ◽  
Hao‐Hsiung Lin
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Doped ◽  
Metalorganic Chemical

Fermi level control of compensating point defects during metalorganic chemical vapor deposition growth of Si-doped AlGaN

2014 ◽  
Vol 105 (22) ◽  
pp. 222101 ◽  
Author(s):  
Zachary Bryan ◽  
Isaac Bryan ◽  
Benjamin E. Gaddy ◽  
Pramod Reddy ◽  
Lindsay Hussey ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Fermi Level ◽  
Point Defects ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Level Control ◽  
Chemical Vapor Deposition Growth ◽  
Si Doped ◽  
Metalorganic Chemical

Very Low Deep Level AlxGa1−xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition

1995 ◽  
Vol 378 ◽  
Author(s):  
Z. C. Huang ◽  
Bing Yang ◽  
H. K. Chen ◽  
J. C. Chen
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Deep Level ◽  
Chemical Vapor ◽  
Deep Levels ◽  
Se Doping ◽  
Transient Spectroscopy ◽  
Low Selenium ◽  
Metalorganic Chemical

ABSTRACTWe have achieved deep-level-free Al0.22Ga0.78As epitaxial layers using low selenium (Se)-doping (8.4 × l016 cm−3) grown by metalorganic chemical vapor deposition (MOCVD). Deep levels in various Al0.22Ga0.78As layers grown on GaAs substrates were measured by deep level transient spectroscopy (DLTS). We have found that the commonly observed oxygen contamination-related deep levels at EC-0.53 and 0.70 eV and germanium-related level at EC-0.30 eV in MOCVD-grown Al0.22Ga0.78 As can be eliminated by low Se-doping. In addition, a deep hole level located at Ev+0.65 eV was found for the first time in highly Se-doped Al0.22Ga0.78 As epilayers. We suggest that low Se-doping (<2 × 1017 cm−3) produces a passivation effect and then deactivates other deep levels in Al0.22Ga0.78As.

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