We report the growth, fabrication and characterization of GaInN/GaN multi-quantum well lasers grown on (00·1) sapphire substrates by low pressure metalorganic chemical vapor deposition. The threshold current density of a 1800 μm long cavity length laser was 1.4 kA/cm2 with a threshold voltage of 25 V. These lasers exhibited series resistances of 13 and 14 Ω at 300 and 79 K, respectively.
Erratum: ‘‘Heavily Si‐doped GaAs grown by low‐pressure metalorganic chemical vapor deposition using tertiarybutylarsine and silane’’ [Appl. Phys. Lett. 60, 489 (1992)]
