Picosecond pulse response characteristics of GaAs metal‐semiconductor‐metal photodetectors

1991 ◽  
Vol 70 (4) ◽  
pp. 2435-2448 ◽  
Author(s):  
C. Moglestue ◽  
J. Rosenzweig ◽  
J. Kuhl ◽  
M. Klingenstein ◽  
M. Lambsdorff ◽  
...  
2019 ◽  
Vol 27 (8) ◽  
pp. 10670 ◽  
Author(s):  
Peng Song ◽  
Chun Liu ◽  
Taifei Zhao ◽  
Hua Guo ◽  
Jinni Chen

2013 ◽  
Vol 481 ◽  
pp. 146-149 ◽  
Author(s):  
Chang Ju Lee ◽  
Hyeon Gu Cha ◽  
Seul Ki Hong ◽  
Seung Hyun Doh ◽  
Yi Sak Koo ◽  
...  

We demonstrated a metal-semiconductor-metal type GaN UV sensor for the first time by using multi-layer graphene as a Schottky electrode. Multi-layer graphene shows good Schottky electrode characteristic and fabricated UV sensor shows good UV response characteristics. The maximum dark current density and photo-responsive current density were 6.42 × 10-9 A/cm2 and 5.57 × 10-5 A/cm2 at the 10 V bias, respectively. UV/visible rejection ratios were higher than 103 with each applied bias from 1 V to 15 V.


Author(s):  
N. M. Bogatov ◽  
L. R. Grigor’yan ◽  
A. I. Kovalenko ◽  
M. S. Kovalenko ◽  
L. S. Lunin

1990 ◽  
Vol 67 (10) ◽  
pp. 6560-6566 ◽  
Author(s):  
F. A. Modine ◽  
R. B. Wheeler

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