Note: Design and characterization of an optical light source based on mixture of white and near-ultraviolet light emitting diode spectra

2011 ◽  
Vol 82 (4) ◽  
pp. 046111 ◽  
Author(s):  
Ferhat Sametoglu ◽  
Oguz Celikel
2008 ◽  
Vol 45 (4) ◽  
pp. 25-32 ◽  
Author(s):  
L. Dimitrocenko ◽  
J. Grube ◽  
P. Kulis ◽  
G. Marcins ◽  
B. Polyakov ◽  
...  

AlGaN-InGaN-GaN Near Ultraviolet Light Emitting DiodeA 382-nm InGaN/AlGaN light-emitting diode (LED) was made on a sapphire substrate by metal-organic vapour phase deposition (MOCVD) technique. Growing of the undoped and Si-doped GaN and AlxGa1-xN monocrystalline layers with a surface roughness of < 1 nm required for making light emitting devices has been carried out. To enhance the LED emission efficiency, a modified symmetric composition of an active single quantum well (SQW) structure was proposed. In addition to the conventional p-doped AlGaN:Mg electron overflow blocking barrier, ann-doped AlGaN:Si SQW barrier layer in the structure was formed that was meant to act as an additional electron tunneling barrier.


2018 ◽  
Vol 12 (04) ◽  
pp. 1 ◽  
Author(s):  
Zengcheng Li ◽  
Legong Liu ◽  
Yingnan Huang ◽  
Meixin Feng ◽  
Jianxun Liu ◽  
...  

2006 ◽  
Vol 89 (14) ◽  
pp. 141123 ◽  
Author(s):  
Jong Kyu Kim ◽  
J.-Q. Xi ◽  
Hong Luo ◽  
E. Fred Schubert ◽  
Jaehee Cho ◽  
...  

2003 ◽  
Vol 83 (23) ◽  
pp. 4713-4715 ◽  
Author(s):  
Qing-Xuan Yu ◽  
Bo Xu ◽  
Qi-Hong Wu ◽  
Yuan Liao ◽  
Guan-Zhong Wang ◽  
...  

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