scholarly journals Semiconducting graphene nanoribbon retains band gap on amorphous or crystalline SiO2

2011 ◽  
Vol 99 (18) ◽  
pp. 183103 ◽  
Author(s):  
M. Zubaer Hossain
Keyword(s):  
Band Gap ◽  
Materials ◽  
2021 ◽  
Vol 14 (17) ◽  
pp. 5079
Author(s):  
Jinyue Guan ◽  
Lei Xu

Using the tight-binding approach, we study the band gaps of boron nitride (BN)/ graphene nanoribbon (GNR) planar heterostructures, with GNRs embedded in a BN sheet. The width of BN has little effect on the band gap of a heterostructure. The band gap oscillates and decreases from 2.44 eV to 0.26 eV, as the width of armchair GNRs, nA, increases from 1 to 20, while the band gap gradually decreases from 3.13 eV to 0.09 eV, as the width of zigzag GNRs, nZ, increases from 1 to 80. For the planar heterojunctions with either armchair-shaped or zigzag-shaped edges, the band gaps can be manipulated by local potentials, leading to a phase transition from semiconductor to metal. In addition, the influence of lattice mismatch on the band gap is also investigated.


2012 ◽  
Vol 86 (8) ◽  
Author(s):  
C. Bronner ◽  
F. Leyssner ◽  
S. Stremlau ◽  
M. Utecht ◽  
P. Saalfrank ◽  
...  

2018 ◽  
Vol 54 ◽  
pp. 35-41
Author(s):  
Mohammad Bashirpour ◽  
Ali Kefayati ◽  
Mohammadreza Kolahdouz ◽  
Hossein Aghababa

—Density function theory (DFT) based simulation combined with non-equilibrium green function (NEGF) was used to theoretically investigate electrical properties of symmetrical and asymmetrical boron nitride (BN) passivated graphene nanoribbons. Using density function theory method, it is demonstrated that the band gap of armchair (A) graphene nanoribbon (GNR) can be widened with boron nitride passivation. five symmetrical and five asymmetrical structures were considered, for which we obtained band gaps from 0.45 eV to 2 eV for symmetrical structures and 0.3 eV to 1.5 eV for asymmetrical structures. For the same width of graphene nanoribbon, our results showed that asymmetrical structure has a smaller band gap and almost the same conductance in comparison with the symmetrical one. Finally, comparison between the asymmetrical structure and the hydrogenated armchair graphene (h-AGNR) nanoribbon showed that, hBN-AGNR exhibited a higher conductance compared to an h-AGNR for the same width of GNR.


2010 ◽  
Vol 108 (3) ◽  
pp. 033709 ◽  
Author(s):  
S. Bala Kumar ◽  
M. B. A. Jalil ◽  
S. G. Tan ◽  
Gengchiau Liang

Nanoscale ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2936-2943 ◽  
Author(s):  
A. I. Chernov ◽  
P. V. Fedotov ◽  
H. E. Lim ◽  
Y. Miyata ◽  
Z. Liu ◽  
...  

Graphene nanoribbon formation inside single-walled carbon nanotubes leads to selective photoluminescence enhancement for exact nanotube geometries and depends on the interplay of several factors.


2014 ◽  
Vol 14 (11) ◽  
pp. 1509-1513 ◽  
Author(s):  
Shi-Hua Tan ◽  
Li-Ming Tang ◽  
Ke-Qiu Chen

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