Surface reconstruction of InP(001) upon adsorption of H2S studied by low-energy electron diffraction, scanning tunneling microscopy, high-resolution electron energy loss, and x-ray photoelectron spectroscopies

1998 ◽  
Vol 83 (6) ◽  
pp. 3071-3076 ◽  
Author(s):  
M. Shimomura ◽  
N. Sanada ◽  
S. Ichikawa ◽  
Y. Fukuda ◽  
M. Nagoshi ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Electron Energy Loss

COMBINED HRLEED AND STM INVESTIGATIONS ON THE INITIAL STAGES OF Cu HETEROEPITAXY Ru(0001)

1997 ◽  
Vol 04 (06) ◽  
pp. 1167-1171 ◽  
Author(s):  
CH. AMMER ◽  
K. MEINEL ◽  
H. WOLTER ◽  
A. BECKMANN ◽  
H. NEDDERMEYER
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Strain Relaxation ◽  
Local Scale ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Low Energy Electron Diffraction ◽  
Layer Structures ◽  
Low Energy Electron

Recent scanning tunneling microscopy (STM) observations revealed different layer structures in the heteroepitaxial Cu/Ru(0001) system with increasing film thickness attributed to various stages of strain relaxation. High-resolution low-energy electron diffraction (HRLEED) analysis permits one to derive more exactly both lattice periodicities and lattice rotations. Furthermore, the representative character of local STM results can be proved. However, STM measurements are needed to identify and to assign the satellite spots to coexistent different superstructures which are superposed incoherently in the diffraction pattern. Generally, the integral LEED results confirm the crystallographic data obtained by STM in a local scale.

Hydrogen On Semiconductor Surfaces

1998 ◽  
Vol 513 ◽  
Author(s):  
J. A. Schaefer ◽  
T. Balster ◽  
V. Polyakov ◽  
U. Rossow ◽  
S. Sloboshanin ◽  
...  
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Semiconductor Surfaces ◽  
Hydrogen Passivation ◽  
Low Energy Electron Diffraction ◽  
Resolution Electron ◽  
Low Energy Electron ◽  
Electron Energy Loss

ABSTRACTWe review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.

Observation of a New Ordered Structure of Oxygen on W(110)

2000 ◽  
Vol 619 ◽  
Author(s):  
D. E. Muzzall ◽  
S. Chiang
Keyword(s):  
High Resolution ◽  
Electron Diffraction ◽  
Low Energy ◽  
Scanning Tunneling ◽  
Ordered Structure ◽  
Tunneling Microscopy ◽  
Low Energy Electron Diffraction ◽  
The Matrix ◽  
Low Energy Electron ◽  
Stm Images

ABSTRACTUsing both low energy electron diffraction (LEED) and scanning tunneling microscopy (STM), we have made the first observation of a new ordered surface structure of oxygen on W(110). This structure is characterized by the matrix relative to the (1×1) W(110) structure, in which 15 tungsten atoms make up the rectangular unit cell. Based on high resolution STM images, a model for the structure is proposed which includes 6 adsorbed oxygen atoms and has a coverage of 0.40 ML.

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