Surface studies of GaAs(111) and GaAs(1̄1̄1̄) using high-resolution electron energy loss spectroscopy, x-ray photoelectron spectroscopy, and low-energy electron diffraction

Author(s):  
D. J. Frankel
1998 ◽  
Vol 513 ◽  
Author(s):  
J. A. Schaefer ◽  
T. Balster ◽  
V. Polyakov ◽  
U. Rossow ◽  
S. Sloboshanin ◽  
...  

ABSTRACTWe review structural and electronic aspects of the reaction of hydrogen with semiconductor surfaces. Among others, we address the Si(100), GexSi1-x(100), GaAs(100), InP(100), SiC(100), SiC(0001) and SiC(0001) surfaces. It is demonstrated that high resolution electron energy loss spectroscopy (HREELS) in conjunction with a number of other surface sensitive techniques like low energy electron diffraction (LEED) and photoelectron spectroscopy (XPS/UPS) can yield important information about the surface atomic structure, the effects of hydrogen passivation and etching and on electronic properties of the surfaces.


1986 ◽  
Vol 83 ◽  
Author(s):  
D. E. Grider ◽  
J. F. Wendelken

ABSTRACTThe adsorption of oxygen on a sodium saturated Cu{110} surface is examined with x-ray photoelectron spectroscopy (XPS) in an extension of a previous study of this system which utilized low energy electron diffraction (LEED), and high resolution electron energy loss spectroscopy (HREELS). The sodium overlayer, despite the presence of an initial oxide contaminant, shows metallic character. Intentionally adsorbed oxygen is in a different chemical state than the initial oxygen contaminant and causes a reduction in the metallic character of the sodium. The sticking coefficient for oxygen on the sodium saturated surface is almost three times greater than for the bare Cu{11O} surface.


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