Exact electron momentum-relaxation times in GaN associated with scattering by polar-optical phonons

1998 ◽  
Vol 84 (7) ◽  
pp. 4020-4021 ◽  
Author(s):  
B. K. Ridley
2005 ◽  
Vol 71 (23) ◽  
Author(s):  
V. V. Kruglyak ◽  
R. J. Hicken ◽  
M. Ali ◽  
B. J. Hickey ◽  
A. T. G. Pym ◽  
...  

2020 ◽  
Vol 116 (10) ◽  
pp. 102406 ◽  
Author(s):  
K. L. Krewer ◽  
W. Zhang ◽  
J. Arabski ◽  
G. Schmerber ◽  
E. Beaurepaire ◽  
...  

2020 ◽  
pp. 342-378
Author(s):  
Sandip Tiwari

This chapter discusses the statics and dynamics of particle ensemble evolution under multiple stimuli—electrical, magnetic and thermal, particularly (thermoelectromagnetic interaction)—by developing the evolution of the distribution function in a generalized form from its thermal equilibrium form. In the presence of electrical and magnetic fields, this shows the Hall effect, magnetoresistance, et cetera. Add thermal gradients, and one can elaborate additional consequences that can be calculated in terms of momentum relaxation times and the nature of impulse interaction, since momentum and energies carried by the ensemble are accounted for. So, parameters such as thermal conductivity due to the carriers can be determined, thermoelectric, thermomagnetic and thermoelectromagnetic interactions can be quantified and the Ettinghausen effect, the Nernst effect, the Righi-Leduc effect, the Ettinghausen-Nernst effect, the Seebeck effect, the Peltier effect and the Thompson coefficient understood. The dynamics also makes it possible to determine the frequency dependence of the phenomena.


2014 ◽  
Vol 63 (7) ◽  
pp. 074209
Author(s):  
Bian Hua-Dong ◽  
Dai Ye ◽  
Ye Jun-Yi ◽  
Song Juan ◽  
Yan Xiao-Na ◽  
...  

1993 ◽  
Vol 07 (13n14) ◽  
pp. 887-893 ◽  
Author(s):  
K.T. TSEN ◽  
C. CHIA ◽  
J. WEST ◽  
H. MORKOC

Population relaxation time of confined as well as interface optical phonons in a series of GaAs-AlAs multiple quantum well structures has been measured by picosecond time-resolved Raman spectroscopy. Our experimental results have shown that (1) within the experimental accuracy, the population relaxation time of confined optical phonons in GaAs-AlAs multiple quantum well structures is independent of GaAs well-width and is given by 6±1 ps at T=10 K; (2) the population relaxation times of both GaAs -like and AlAs -like interface optical phonons increase as GaAs well-width increases from 20 Å to 100 Å. These experimental results are compared with theoretical calculations recently carried out by Gupta and Ridley (Ref. 3).


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