Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO₂ surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO₂ surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO₂ surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO₂ surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

Area Selective Deposition of Metals from the Electrical Resistivity of the Substrate

<p>Area selective deposition (ASD) of films only on desired areas of the substrate opens for less complex fabrication of nanoscaled electronics. We show that a newly developed CVD method, where plasma electrons are used as the reducing agent in deposition of metallic thin films, is inherently area selective from the electrical resistivity of the substrate surface. When depositing iron with the new CVD method, no film is deposited on high-resistivity SiO₂ surfaces whereas several hundred nm thick iron films are deposited on areas with low resistivity, obtained by adding a thin layer of silver on the SiO₂ surface. Based on such a scheme, we show how to use the electric resistivity of the substrate surface as an extension of the ASD toolbox for metal-on-metal deposition. </p>

Корреляция электрических, гальваномагнитных и магнитных характеристик нанокристаллических пленок железа, полученных методом ионно-ассистированного осаждения

Here we present the measurements of the temperature dependence of resistance, transverse and longitudinal magnetoresistance (MR) in nanocrystalline iron films in the temperature range 2-300 K and the sweep of the magnetic field up to 8 T. Thin nanocrystalline films of α- iron phase with 80 nm thickness were obtained by ion-beam assisted deposition on a silicon substrate. In addition to the shape anisotropy, the obtained iron films exhibited perpendicular magnetic anisotropy (PMA), which disappeared after annealing the films at a temperature of 450 oC in a vacuum. The effect of PMA on the sign and magnitude of the MR of iron films, as well as on the magnetic field dependences of the magnetoresistive effect, recorded at different orientations of the external magnetic field with respect to the film plane and current direction, is experimentally shown. The results obtained are discussed in the framework of modern views on the processes of charge transfer in a weakly disordered ferromagnetic films with different magnetic anisotropy and domain structure when a weak (less than the saturation field of magnetization) or strong (higher than the saturation field) external magnetic field is applied.

The Effect of Laser Re-Solidification on Microstructure and Photo-Electrochemical Properties of Fe-Decorated TiO2 Nanotubes

Fossil fuels became increasingly unpleasant energy source due to their negative impact on the environment; thus, attractiveness of renewable, and especially solar energy, is growing worldwide. Among others, the research is focused on smart combination of simple compounds towards formation of the photoactive materials. Following that, our work concerns the optimized manipulation of laser light coupled with the iron sputtering to transform titania that is mostly UV-active, as well as exhibiting poor oxygen evolution reaction to the material responding to solar light, and that can be further used in water splitting process. The preparation route of the material was based on anodization providing well organized system of nanotubes, while magnetron sputtering ensures formation of thin iron films. The last step covering pulsed laser treatment of 355 nm wavelength significantly changes the material morphology and structure, inducing partial melting and formation of oxygen vacancies in the elementary cell. Depending on the applied fluence, anatase, rutile, and hematite phases were recognized in the final product. The formation of a re-solidified layer on the surface of the nanotubes, in which thickness depends on the laser fluence, was shown by microstructure studies. Although a drastic decrement of light absorption was recorded especially in UV range, laser-annealed samples have shown activity under visible light even 20 times higher than bare titania. Electrochemical analysis has shown that the improvement of photoresponse originates mainly from over an order of magnitude higher charge carrier density as revealed by Mott-Schottky analysis. The results show that intense laser light can modulate the semiconductor properties significantly and can be considered as a promising tool towards activation of initially inactive material for the visible light harvesting.