Summary Abstract: Growth of single crystal and polycrystalline insulating fluoride films on semiconductors by molecular beam epitaxy

1982 ◽  
Vol 20 (3) ◽  
pp. 731-732 ◽  
Author(s):  
P. W. Sullivan ◽  
T. I. Cox ◽  
R. F. C. Farrow ◽  
G. R. Jones ◽  
D. B. Gasson ◽  
...  
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Miri Choi ◽  
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Rytis Dargis ◽  
Chih-Kang Shih ◽  
Alexander A. Demkov ◽  
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Li Yue ◽  
Peng Wang ◽  
Kai Wang ◽  
Xiaoyan Wu ◽  
Wenwu Pan ◽  
...  

2003 ◽  
Vol 251 (1-4) ◽  
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Min-Ho Kim ◽  
F.S. Juang ◽  
Y.G. Hong ◽  
C.W. Tu ◽  
Seong-Ju Park

1990 ◽  
Vol 99 (1-4) ◽  
pp. 451-454 ◽  
Author(s):  
Yoshitaka Tomomura ◽  
Masahiko Kitagawa ◽  
Akira Suzuki ◽  
Shigeo Nakajima

1976 ◽  
Vol 15 (6) ◽  
pp. 1001-1007 ◽  
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Takafumi Yao ◽  
Satoru Amano ◽  
Yunosuke Makita ◽  
Shigeru Maekawa

1995 ◽  
Vol 150 ◽  
pp. 1154-1158 ◽  
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Kiyoshi Sakaue, ◽  
Naokatsu Sano ◽  
Hikaru Terauchi ◽  
Akira Yoshihara

1989 ◽  
Vol 160 ◽  
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Y.H. Lee ◽  
N.R. Parikh ◽  
J.B. Posthill ◽  
M.J. Mantini ◽  
...  

AbstractEpitaxial growth of thin films, alloys, and multilayers from the Cu-Ni system are being explored as a means of fabricating a substrate to lattice match diamond. These single crystal films are superior to commercially available substrate material. Due to the high reactivity of the metal surfaces in atmosphere, all processing must be done under UHV conditions. In vacuo preparation, growth, and analysis of the metals is described.


2017 ◽  
Vol 110 (25) ◽  
pp. 253506 ◽  
Author(s):  
YongJin Cho ◽  
Zongyang Hu ◽  
Kazuki Nomoto ◽  
Huili Grace Xing ◽  
Debdeep Jena

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